Group III nitride semiconductor light-emitting device
First Claim
1. A Group III nitride semiconductor light-emitting device comprising:
- at least an n-type-layer-side cladding layer;
a light-emitting layer comprising a multiple quantum structure comprising a plurality of layer units, each unit comprising at least a well layer, a first barrier layer comprising Alx1Ga1-x1N (0<
x1<
1), and a second barrier layer comprising Alx2Ga1-x2N (0<
x2<
1) with an Al composition ratiox2 which is more than an Al composition ratio x1 of the first barrier layer; and
a p-type-layer-side cladding layer, each of the n-type-layer-side cladding layer, the light-emitting layer, and the p-type-layer-side cladding layer comprising a Group III nitride semiconductor,wherein, the light-emitting layer comprises a first block, a second block, and a third block in a thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, an Al composition ratio of a selected barrier layer which is at least one of the first barrier layer and the second barrier layer in each block is set to satisfy a relation z<
y<
x where an average Al composition ratio of the selected barrier layer(s) in the first block is represented as x, an average Al composition ratio of the selected barrier layer(s) in the second block is represented as y, and an average Al composition ratio of the selected barrier layer(s) in the third block is represented as z.
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Abstract
A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an AlxGa1-xN (0<x<1) layer as a barrier layer. When the light-emitting layer is divided into three blocks including first, second and third blocks in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, the number of barrier layers are the same in the first and third blocks, and the Al composition ratio of each light-emitting layer is set to satisfy a relation x+z=2y and z<x where an average Al composition ratio of the barrier layers in the first block is represented as x, an average Al composition ratio of the barrier layers in the second block is represented as y, and an average Al composition ratio of the barrier layers in the third block is represented as z.
16 Citations
20 Claims
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1. A Group III nitride semiconductor light-emitting device comprising:
-
at least an n-type-layer-side cladding layer; a light-emitting layer comprising a multiple quantum structure comprising a plurality of layer units, each unit comprising at least a well layer, a first barrier layer comprising Alx1Ga1-x1N (0<
x1<
1), and a second barrier layer comprising Alx2Ga1-x2N (0<
x2<
1) with an Al composition ratiox2 which is more than an Al composition ratio x1 of the first barrier layer; anda p-type-layer-side cladding layer, each of the n-type-layer-side cladding layer, the light-emitting layer, and the p-type-layer-side cladding layer comprising a Group III nitride semiconductor, wherein, the light-emitting layer comprises a first block, a second block, and a third block in a thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, an Al composition ratio of a selected barrier layer which is at least one of the first barrier layer and the second barrier layer in each block is set to satisfy a relation z<
y<
x where an average Al composition ratio of the selected barrier layer(s) in the first block is represented as x, an average Al composition ratio of the selected barrier layer(s) in the second block is represented as y, and an average Al composition ratio of the selected barrier layer(s) in the third block is represented as z. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 19, 20)
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16. A Group III nitride semiconductor light-emitting device comprising:
-
at least an n-type-layer-side cladding layer; a light-emitting layer comprising a multiple quantum structure comprising a plurality of layer units, each unit comprising at least a well layer, a first barrier layer comprising Alx1Ga1-x1N (0<
x1<
1), and a second barrier layer comprising Alx2Ga1-x2N (0<
x2<
1) with an Al composition ratio x2 which is more than an Al composition ratio x1 of the first barrier layer; anda p-type-layer-side cladding layer, each of the n-type-layer-side cladding layer, the light-emitting layer, and the p-type-layer-side cladding layer comprising a Group III nitride semiconductor, wherein, the light-emitting layer comprises a first block, a second block, and a third block in a thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, an Al composition ratio of a selected barrier layer which is at least one of the first barrier layer and the second barrier layer in each block is the same in the first, second, and third blocks, and the thickness of the selected barrier layer(s) in each block is set so as to satisfy a<
b<
c where an average thickness of the selected barrier layer(s) in the first block is represented as a, an average thickness of the selected barrier layer(s) in the second block as b, and an average thickness of the selected barrier layer(s) in the third block as c. - View Dependent Claims (17, 18)
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Specification