Light emitting device and method of fabricating a light emitting device

• US 8,587,017 B2
• Filed: 03/24/2011
• Issued: 11/19/2013
• Est. Priority Date: 07/05/2009
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Kuo, Wei-Hung, Lin, Suh-Fang, Xuan, Rong, Fu, Yi-Keng
• Primary Examiner(s): Toledo, Fernando L
• Assistant Examiner(s): PRASAD, NEIL R
• Application Number:
  US13/070,486
• Publication Number:
  US 20110254044A1
• Time in Patent Office: 971 Days
• Field of Search: 257/99, 257/E33.062, 438/27
• US Class Current: 257/99
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.

Claims

1. A light emitting device, comprising:

a carrier substrate;

at least one epitaxy structure, disposed on the carrier substrate, and comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence, wherein the first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate;

a high resistant ring wall, surrounding the epitaxy structure, wherein a width of the high resistant ring wall is greater than 5 μ

m and the high resistant ring wall is in contact with the first semiconductor layer, the active layer and the second semiconductor layer;

a first electrode, disposed between the carrier substrate and the epitaxy structure; and

a second electrode, disposed at a side of the epitaxy structure away from the carrier substrate.

2. The light emitting device as claimed in claim 1, wherein the width of the high resistant ring wall is substantially smaller than 50 μ

m.

3. The light emitting device as claimed in claim 1, further comprising a passivation layer wrapping the high resistant ring wall.

4. The light emitting device as claimed in claim 1, wherein a material of the high resistant ring wall comprises undoped gallium nitride (GaN), an undoped GaN series material, aluminium oxide, aluminium nitride, a ceramic material, or combinations thereof.

5. The light emitting device as claimed in claim 1, wherein the epitaxy structure has at least one groove, and the at least one groove extend towards the first semiconductor layer from a side of the epitaxy structure contacting the first electrode and does not penetrate through the first semiconductor layer.

6. The light emitting device as claimed in claim 5, further comprising at least one current block structure disposed in the at least one groove of the epitaxy structure, wherein the current block structure corresponds to the second electrode such that the current block structure and the second electrode are overlapped when the light emitting device is viewed from a top view.

7. The light emitting device as claimed in claim 6, wherein a height of the high resistant ring wall is substantially equal to a height of the current block structure, and the first semiconductor layer of the epitaxy structure has a protrusion portion located at a side of the high resistant ring wall away from the carrier substrate.

8. The light emitting device as claimed in claim 1, wherein a height of the high resistant ring wall is substantially equal to a height of the epitaxy structure.

9. The light emitting device as claimed in claim 8, wherein an outer surface of the high resistant ring wall is exposed.