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Light emitting device and method of fabricating a light emitting device

  • US 8,587,017 B2
  • Filed: 03/24/2011
  • Issued: 11/19/2013
  • Est. Priority Date: 07/05/2009
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a carrier substrate;

    at least one epitaxy structure, disposed on the carrier substrate, and comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence, wherein the first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate;

    a high resistant ring wall, surrounding the epitaxy structure, wherein a width of the high resistant ring wall is greater than 5 μ

    m and the high resistant ring wall is in contact with the first semiconductor layer, the active layer and the second semiconductor layer;

    a first electrode, disposed between the carrier substrate and the epitaxy structure; and

    a second electrode, disposed at a side of the epitaxy structure away from the carrier substrate.

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