Transistor arrangement with a MOSFET
First Claim
1. A semiconductor arrangement, comprising:
- a MOSFET comprising a source region, a drift region and a drain region of a first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a source electrode contacting the source region and the body region; and
a normally-off JFET comprising a channel region of the first conductivity type that is coupled between the source electrode and the drift region and extends adjacent the body region so that a p-n junction is formed between the body region and the channel region.
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Abstract
A semiconductor arrangement includes a MOSFET having a source region, a drift region and a drain region of a first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a source electrode contacting the source region and the body region. The semiconductor arrangement further includes a normally-off JFET having a channel region of the first conductivity type that is coupled between the source electrode and the drift region and extends adjacent the body region so that a p-n junction is formed between the body region and the channel region.
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Citations
27 Claims
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1. A semiconductor arrangement, comprising:
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a MOSFET comprising a source region, a drift region and a drain region of a first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a source electrode contacting the source region and the body region; and a normally-off JFET comprising a channel region of the first conductivity type that is coupled between the source electrode and the drift region and extends adjacent the body region so that a p-n junction is formed between the body region and the channel region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A MOSFET, comprising:
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a semiconductor body with a source region, a drift region and a drain region of a first conductivity type, and a body region of a second conductivity type arranged between the source region and the drift region; a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric; a source electrode contacting the source region and the body region; and a channel region of the first conductivity type extending from the source electrode to the drift region adjacent to the body region, so that a p-n junction is formed between the body region and the channel region, wherein a doping concentration of the body region and a width of the channel region is such that an intrinsic depletion zone pinches off the channel region when the MOSFET is in an unbiased state. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification