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Integrated compact MEMS device with deep trench contacts

  • US 8,587,077 B2
  • Filed: 01/02/2012
  • Issued: 11/19/2013
  • Est. Priority Date: 01/02/2012
  • Status: Expired due to Fees
First Claim
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1. A compact MEMS motion sensor device, applicable to both flip chip and wire bonding technologies, said device comprising:

  • a CMOS substrate layer;

    a plurality of anchor posts, embedded inside and penetrating through said CMOS substrate layer, each anchor post of said plurality of anchor posts having an isolation oxide layer surrounding a conductive layer;

    a CMOS ASIC device module, fabricated on a top side of said CMOS substrate layer, further comprising;

    a field oxide (FOX) layer;

    a first set of implant doped silicon areas forming CMOS wells;

    a second set of implant doped silicon areas forming CMOS sources/drains;

    a first polysilicon layer forming CMOS transistor gates, said CMOS wells, said CMOS sources/drains and said CMOS transistor gates forming CMOS transistors;

    an oxide layer embedded with a plurality of metal layers interleaved with a plurality of via hole layers, a first via hole layer of said plurality of via hole layers acting as CMOS contacts and remaining via hole layers acting as CMOS vias, said plurality of metals layers and said plurality of via hole layers forming a scribe seal;

    a Nitride deposition layer;

    an under bump metal (UBM) layer; and

    a plurality of solder spheres, said UBM layer and said plurality of solder spheres forming a flip chip bump layer; and

    a MEMS device module, attached on a backside of said CMOS substrate layer, further comprising;

    a backside interconnect isolation oxide layer, for isolating said MEMS device module from said CMOS substrate layer;

    a first MEMS bonding layer;

    a second MEMS bonding layer;

    a first metal compound layer, located between said first MEMS bonding layer and said second MEMS bonding layer;

    a MEMS layer, having a plurality of via holes for forming MEMS motion fingers;

    a first MEMS eutectic bonding layer;

    a second MEMS eutectic bonding layer;

    a second metal compound layer, located between said first MEMS eutectic bonding layer and said second MEMS eutectic bonding layer; and

    a MEMS cap layer;

    wherein a plurality of cavities exists between said backside interconnect isolation oxide layer and said second MEMS bonding layer, and a gap exists between said MEMS layer and said MEMS cap layer, said plurality of via holes in said MEMS layer connecting said plurality of cavities and said gap, and said plurality of anchor posts serving as signal interconnects and anchors for said MEMS device module and said CMOS ASIC device module.

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