Integrated circuit and fabricating method thereof
First Claim
1. An integrated circuit, comprising:
- a silicon substrate with a logical circuit region and a micro electromechanical system (MEMS) region;
a metal oxide semiconductor device disposed on the logical circuit region of the silicon substrate;
an interconnecting structure disposed above the silicon substrate and electrically connected with the metal oxide semiconductor device, the interconnecting structure comprises a plurality of dielectric layers, wherein each dielectric layer filled with the at least a conductive material; and
a MEMS diaphragm disposed between any two adjacent dielectric layers located on the MEMS region, wherein the dielectric layer under the MEMS diaphragm has a plurality of first openings exposing corresponding conductive materials, the MEMS diaphragm comprising;
a bottom insulating layer covering sidewalls of the first opening and having at least a first trench;
a first electrode layer disposed on the bottom insulating layer and filling into the first trench to electrically connect with the corresponding conductive materials; and
a top insulating layer disposed on the first electrode layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.
-
Citations
20 Claims
-
1. An integrated circuit, comprising:
-
a silicon substrate with a logical circuit region and a micro electromechanical system (MEMS) region; a metal oxide semiconductor device disposed on the logical circuit region of the silicon substrate; an interconnecting structure disposed above the silicon substrate and electrically connected with the metal oxide semiconductor device, the interconnecting structure comprises a plurality of dielectric layers, wherein each dielectric layer filled with the at least a conductive material; and a MEMS diaphragm disposed between any two adjacent dielectric layers located on the MEMS region, wherein the dielectric layer under the MEMS diaphragm has a plurality of first openings exposing corresponding conductive materials, the MEMS diaphragm comprising; a bottom insulating layer covering sidewalls of the first opening and having at least a first trench; a first electrode layer disposed on the bottom insulating layer and filling into the first trench to electrically connect with the corresponding conductive materials; and a top insulating layer disposed on the first electrode layer. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. An integrated circuit, comprising:
-
a silicon substrate; an interconnecting structure disposed above the silicon substrate and comprising a plurality of dielectric layers, wherein each dielectric layer filled with the at least a conductive material; and a micro electromechanical system (MEMS) diaphragm disposed between any two adjacent dielectric layers, wherein the dielectric layer under the MEMS diaphragm has a plurality of first openings exposing corresponding conductive materials, the MEMS diaphragm comprising; a bottom insulating layer covering sidewalls of the first opening and having at least a first trench; a first electrode layer disposed on the bottom insulating layer and filling into the first trench to electrically connect with the corresponding conductive materials; and a top insulating layer disposed on the first electrode layer. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. A method for fabricating an integrated circuit, comprising:
-
providing a silicon substrate with a logical circuit region and a micro electromechanical system (MEMS) region; forming a metal oxide semiconductor device on the logical circuit region of the conductive substrate; forming an interconnecting structure electrically connecting to the metal oxide semiconductor device and comprising a plurality of dielectric layers above the silicon substrate, each dielectric layer filled with the at least a conductive material; forming a MEMS diaphragm between any two adjacent dielectric layers of the interconnecting structure on the MEMS region, wherein the steps of forming the MEMS diaphragm comprising; forming a plurality of first openings in any dielectric layer of the interconnecting structure to expose the corresponding conductive materials; forming a bottom insulating layer on the dielectric layer to fill into the first openings; removing a portion of the bottom insulating layer located on the bottom of the first openings to form at least a first trench exposing corresponding at least a portion of one of the conductive materials; forming a first electrode layer on the bottom insulating layer to fill into the first trench and electrically connect to the corresponding conductive materials; and forming a top insulating layer to cover the first electrode layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
-
Specification