Wide band and radio frequency waveguide and hybrid integration in a silicon package
First Claim
Patent Images
1. A device, comprising:
- a device wafer having a circuit component formed thereon; and
a cap wafer bonded to said device wafer;
said cap wafer having a cavity therein, said cavity having a width and height such that an impedance of a transmission line is dependent upon said width and height of said cavity;
said cavity having a volume, the volume substantially enclosing said circuit component formed on said device wafer;
said cap wafer being hermetically sealed to said device wafer.
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Abstract
A device includes a device wafer having a circuit component formed thereon and having vias formed therein and a cap wafer bonded to the device wafer. The cap wafer has a cavity therein. The cavity has a post formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor within the cavity.
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Citations
78 Claims
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1. A device, comprising:
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a device wafer having a circuit component formed thereon; and a cap wafer bonded to said device wafer; said cap wafer having a cavity therein, said cavity having a width and height such that an impedance of a transmission line is dependent upon said width and height of said cavity; said cavity having a volume, the volume substantially enclosing said circuit component formed on said device wafer; said cap wafer being hermetically sealed to said device wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A device, comprising:
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a device wafer having a center conductor formed thereon; and a cap wafer bonded to said device wafer; said cap wafer having a cavity therein, said cavity having a width and height; said center conductor having a width such that an impedance of said center conductor within said cavity is dependent upon said width of said center conductor; said cap wafer being hermetically sealed to said device wafer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A device, comprising:
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a device wafer having a circuit component formed thereon and having vias formed therein; and a cap wafer bonded to said device wafer; said cap wafer having a cavity therein, said cavity having a post formed therein; said post being positioned to mechanically support said vias formed in said device wafer; said cavity having a volume, the volume substantially enclosing said circuit component formed on said device wafer; said cap wafer being hermetically sealed to said device wafer. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37)
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38. A MEMS switch, comprising:
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a device wafer having a MEMS component formed thereon and having vias formed therein; a cap wafer bonded to said device wafer; and a conductor bonded to said vias; said cap wafer having a cavity therein, said cavity having a post formed therein; said post being positioned to mechanically support said vias formed in said device wafer; said cavity having a volume, the volume substantially enclosing said MEMS component formed on said device wafer; said cap wafer being hermetically sealed to said device wafer. - View Dependent Claims (39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A device, comprising:
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a device wafer having a circuit component formed thereon; a first cap wafer bonded to a first side of said device wafer; and a second cap wafer bonded to a second side of said device wafer; said first cap wafer having a first cap wafer cavity therein, said first cap wafer cavity having a width and height such that an impedance of a transmission line is dependent upon said width and height of said first cap wafer cavity; said second cap wafer having a second cap wafer cavity therein; said first and second cap wafers being hermetically sealed to said device wafer. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56)
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57. A device, comprising:
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a device wafer having a center conductor formed thereon; a first cap wafer bonded to a first side of said device wafer; and a second cap wafer bonded to a second side of said device wafer; said first cap wafer having a first cap wafer cavity therein, said first cap wafer cavity having a width and height; said center conductor having a width such that an impedance of said center conductor is dependent upon said width of said center conductor; said second cap wafer having a second cap wafer cavity therein; said first and second cap wafers being hermetically sealed to said device wafer. - View Dependent Claims (58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68)
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69. A device, comprising:
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a device wafer having a circuit component formed thereon and having vias formed therein; a first cap wafer bonded to a first side of said device wafer; and a second cap wafer bonded to a second side of said device wafer; said first cap wafer having a first cap wafer cavity therein, said first cap wafer cavity having a post formed therein; said second cap wafer having a second cap wafer cavity therein, said second cap wafer cavity having a post formed therein; said post in said first cap wafer cavity being positioned to mechanically support said vias formed in said device wafer; said post in said second cap wafer cavity being positioned to mechanically support said vias formed in said device wafer; said first cap wafer cavity having a volume, the volume substantially enclosing said circuit component formed on said device wafer; said first and second cap wafers being hermetically sealed to said device wafer. - View Dependent Claims (70, 71, 72, 73, 74, 75, 76, 77, 78)
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Specification