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Semiconductor structures and methods of forming the same

  • US 8,587,127 B2
  • Filed: 06/15/2011
  • Issued: 11/19/2013
  • Est. Priority Date: 06/15/2011
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a dielectric layer disposed over a substrate;

    a metallic line disposed in the dielectric layer; and

    a through-silicon-via (TSV) structure continuously extending through the dielectric layer and the substrate, whereinan upper surface of the metallic line is level with an upper surface of the TSV structure, andthe dielectric layer continuously extends over the substrate and downwardly in a thickness direction of the substrate to be interposed between the TSV structure and the substrate.

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