Semiconductor structures and methods of forming the same
First Claim
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1. A semiconductor structure, comprising:
- a dielectric layer disposed over a substrate;
a metallic line disposed in the dielectric layer; and
a through-silicon-via (TSV) structure continuously extending through the dielectric layer and the substrate, whereinan upper surface of the metallic line is level with an upper surface of the TSV structure, andthe dielectric layer continuously extends over the substrate and downwardly in a thickness direction of the substrate to be interposed between the TSV structure and the substrate.
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Abstract
A semiconductor structure includes a dielectric layer disposed over a substrate. A metallic line is disposed in the dielectric layer. A through-silicon-via (TSV) structure continuously extends through the dielectric layer and the substrate. A surface of the metallic line is substantially leveled with a surface of the TSV structure.
50 Citations
20 Claims
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1. A semiconductor structure, comprising:
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a dielectric layer disposed over a substrate; a metallic line disposed in the dielectric layer; and a through-silicon-via (TSV) structure continuously extending through the dielectric layer and the substrate, wherein an upper surface of the metallic line is level with an upper surface of the TSV structure, and the dielectric layer continuously extends over the substrate and downwardly in a thickness direction of the substrate to be interposed between the TSV structure and the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor structure, comprising:
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a through-silicon-via (TSV) structure continuously extending through a substrate; a liner layer continuously extending over the substrate and downwardly in a thickness direction of the substrate to be interposed between the TSV structure and the substrate; and a metallic line disposed in the liner layer, wherein an upper surface of the metallic line is level with an upper surface of the TSV structure; wherein a first portion of the liner layer that is interposed between the TSV structure and the substrate has a first thickness measured in a direction perpendicular to the thickness direction of the substrate, a second portion of the liner layer that is over the substrate has a second thickness measured in the thickness direction of the substrate, and the first thickness is greater than the second thickness. - View Dependent Claims (9, 10, 11, 12)
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13. A semiconductor structure comprising:
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a first dielectric layer and a second dielectric layer both disposed over a substrate; a metallic line disposed in the first dielectric layer; a semiconductor device formed within the second dielectric layer and coupled with the metallic line; and a through-silicon-via (TSV) structure continuously extending through the first and second dielectric layers and the substrate, wherein an upper surface of the metallic line is level with an upper surface of the TSV structure, the first dielectric layer continuously extends over the substrate and downwardly in a thickness direction of the substrate to be interposed between the TSV structure and the second dielectric layer and between the TSV structure and the substrate, a first portion of the first dielectric layer that is interposed between the TSV structure and the substrate has a first thickness measured in a direction perpendicular to the thickness direction of the substrate, a second portion of the first dielectric layer that is over the substrate has a second thickness measured in the thickness direction of the substrate, and the first thickness is greater than the second thickness. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification