Methods for cleaning a semiconductor substrate

• US 8,591,662 B2
• Filed: 10/26/2012
• Issued: 11/26/2013
• Est. Priority Date: 12/30/2005
• Status: Expired due to Fees

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Freer, Erik M., deLarios, John, Mikhaylichenko, Katrina, Ravkin, Michael, Korolik, Mikhail, Redeker, Fred C.
• Primary Examiner(s): GOLIGHTLY, ERIC WAYNE
• Application Number:
  US13/661,929
• Publication Number:
  US 20130048021A1
• Time in Patent Office: 396 Days
• Field of Search: None
• US Class Current: 134/6
• CPC Class Codes: B05D 3/10 by other chemical means
• CPC Class Codes: B08B 3/00 Cleaning by methods involving the use or presence of liquid or steam B08B9/00 takes precedence
• CPC Class Codes: B08B 7/00 Cleaning by methods not provided for in a single other subclass or a single group in this subclass
• CPC Class Codes: B08B 7/02 by distortion, beating, or vibration of the surface to be cleaned B08B7/0007 takes precedence
• CPC Class Codes: C11D 17/0004 Non aqueous liquid compositions comprising insoluble particles
• CPC Class Codes: C11D 17/0013 Liquid compositions with insoluble particles in suspension C11D17/0021, C11D17/0026, C11D17/003 take precedence
• CPC Class Codes: C11D 17/0017 Multi-phase liquid compositions
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/14 Fillers; Abrasives ; Abrasive compositions; Suspending or absorbing agents not provided for in one single group of C11D3/12; Specific features concerning abrasives, e.g. granulometry or mixtures dyes, pigments C11D3/40
• CPC Class Codes: C11D 9/02 on alkali or ammonium soaps
• CPC Class Codes: C23G 1/00 Cleaning or pickling metallic material with solutions or molten salts with organic solvents C23G5/02
• CPC Class Codes: C23G 1/18 Organic inhibitors
• CPC Class Codes: G03F 7/42 Stripping or agents therefor
• CPC Class Codes: G03F 7/423 containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/02096 only mechanical cleaning
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/6708 : using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67086 : with the semiconductor substrates being dipped in baths or vessels
• CPC Class Codes: H01L 21/67092 : Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/6715 : Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: Y10T 137/4891 : With holder for solid, flaky or pulverized material to be dissolved or entrained

Abstract

A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

Claims

1. A method for cleaning a substrate, comprising method operations of:

applying an activation solution to a surface of the substrate;

contacting the activation solution and the surface of the substrate with a surface of a solid cleaning element;

absorbing the activation solution into a portion of the solid cleaning element;

moving one of the substrate or the solid cleaning element relative to each other; and

applying force, by the moving, to the solid cleaning element against the substrate surface to cause a plastic deformation of the surface of the solid cleaning element thereby depositing a layer of the solid cleaning element onto the substrate surface; and

rinsing the layer of the solid cleaning element off of the substrate surface to clean the surface of the substrate.

2. The method of claim 1, wherein the solid cleaning element is a planar surface composed of a fatty acid.

3. The method of claim 1, wherein the activation solution diffuses into the portion of the solid cleaning element causing the portion of the solid cleaning element to become softer relative to a remainder of the solid cleaning element.

4. The method of claim 1, wherein the activation solution is a surfactant.

5. The method of claim 4, wherein the surfactant is an ionic surfactant.

6. The method of claim 1, wherein a hardness of the solid cleaning element is less than a hardness of the substrate.

7. The method of claim 1, wherein a mixture of water, sulfuric acid, and hydrogen peroxide is used for rinsing the layer of the solid cleaning element off of the substrate surface, and wherein the method operation of moving one of the solid cleaning element or the substrate relative to each other includes interacting the solid cleaning element with contaminants disposed on the substrate surface.

8. A method for cleaning a wafer, comprising:

applying an activation solution to a surface of the wafer;

contacting the activation solution and the surface of the wafer with a surface of a solid cleaning element;

absorbing the activation solution into a portion of the solid cleaning element;

moving one of the wafer or the solid cleaning element relative to each other, the moving acting to apply a force to the solid cleaning element against the wafer surface to cause a plastic deformation of the surface of the solid cleaning element thereby placing an amount of the solid cleaning element onto the surface of the wafer; and

rinsing the amount of the solid cleaning element off of the surface of the wafer to clean the surface of the wafer.

9. The method of claim 8, wherein the solid cleaning element is a planar surface composed of a fatty acid.

10. The method of claim 8, wherein the activation solution diffuses into the portion of the solid cleaning element causing the portion of the solid cleaning element to become softer relative to a remainder of the solid cleaning element.

11. The method of claim 8, wherein the activation solution is a surfactant.

12. The method of claim 11, wherein the surfactant is an ionic surfactant.

13. The method of claim 8, wherein a hardness of the solid cleaning element is less than a hardness of the wafer.

14. The method of claim 8, wherein a mixture of water, sulfuric acid, and hydrogen peroxide is used for rinsing the layer of the solid cleaning element off of the wafer surface, and wherein the method operation of moving one of the solid cleaning element or the wafer relative to each other includes interacting the solid cleaning element with contaminants disposed on the wafer surface.