Etching growth layers of light emitting devices to reduce leakage current

• US 8,592,242 B2
• Filed: 11/18/2010
• Issued: 11/26/2013
• Est. Priority Date: 11/18/2010
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: TSMC Solid State Lighting Ltd. (Epistar Corporation)
• Inventors: Huang, Hung-Wen, Hsia, Hsing-Kuo, Chiu, Ching-Hua
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): Stevenson, Andre C
• Application Number:
  US12/949,316
• Publication Number:
  US 20120126262A1
• Time in Patent Office: 1,104 Days
• Field of Search: None
• US Class Current: 438/52
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

Claims

1. A method of fabricating a light emitting diode (LED) comprising:

providing a growth substrate;

growing first epitaxial layers on the growth substrate, wherein the first epitaxial layers include an un-doped layer above the growth substrate and an n-doped layer above the un-doped layer;

patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region;

etching the first region of the n-doped layer to create a roughened surface of the first region of the n-doped layer;

,

growing additional epitaxial layers on the mesa region of the n-doped layer wherein the additional epitaxial layers include an active layer above the mesa region of the n-doped layer and a p-doped layer above the active layer; and

forming metal contacts on the p-doped layer and on the roughened surface of the n-doped layer in the first region;

wherein said growing additional epitaxial layers comprises growing the p-doped layer to cap the active layer on both a top surface and an upper portion of lateral sides of the active layer.

2. The method of claim 1, wherein said patterning the n-doped layer comprises forming a patterned first dielectric layer on the mesa region of the n-doped layer.

3. The method of claim 2, wherein said growing additional epitaxial layers comprises:

removing the patterned first dielectric layer to expose the mesa region of the n-doped layer;

forming a patterned second dielectric layer on the first region of the n-doped layer;

growing the additional epitaxial layers on the exposed mesa region of the n-doped layer; and

removing the patterned second dielectric layer.

4. The method of claim 2, wherein said etching the first region of the n-doped layer to create a roughened surface comprises etching the first region by using the patterned first dielectric layer as a mask.

5. The method of claim 3, wherein said growing the additional epitaxial layers comprises growing the active layer to have a top surface that is higher than a top surface of the patterned second dielectric layer on the first region.

6. The method of claim 5, wherein said growing the additional epitaxial layers further comprises growing the p-doped layer to cap the top surface and sidewalls of the active layer that protrude above the top surface of the patterned second dielectric layer.

7. The method of claim 1, wherein said forming metal contacts comprises:

forming a patterned current spreading layer on the p-doped layer;

forming a p-electrode on the patterned current spreading layer; and

forming an n-electrode on the roughened surface of the n-doped layer of the first region.

8. A method of forming a light emitting diode (LED) comprising:

providing a growth substrate;

growing an n-doped layer of a semiconductor material on the growth substrate;

forming a patterned first dielectric layer to cover a mesa region of the n-doped layer;

etching the n-doped layer not covered by the patterned first dielectric layer to form an etched region of the n-doped layer surrounding a mesa structure, wherein the mesa structure includes the mesa region of the n-doped layer capped by the patterned first dielectric layer;

roughening the etched region of the n-doped layer to form a scattering mirror;

removing the patterned first dielectric layer to expose the mesa region of the n-doped layer of the mesa structure;

forming a patterned second dielectric layer on the scattering mirror;

growing an active layer on top of the mesa region of the n-doped layer of the mesa structure;

growing a p-doped layer of the semiconductor material to cover a top surface and an upper portion of sidewalls of the active layer of the mesa structure;

removing the patterned second dielectric layer to expose the scattering mirror; and

forming electrodes over the p-doped layer and the n-doped layer.

9. The method of claim 8, wherein said etching the n-doped layer comprises:

etching a top portion of the n-doped layer not covered by the patterned first dielectric layer to define the mesa structure, wherein the mesa structure is thicker than the etched region of the n-doped layer.

10. The method of claim 8, wherein said etching the n-doped layer comprises a buffered oxide etching process.

11. The method of claim 8, wherein said etching the n-doped layer comprises a reactive ion etching process.

12. The method of claim 8, wherein said roughening the etched region comprises:

roughening the etched region of the n-doped layer by using the patterned first dielectric layer as a mask to protect the mesa region of the n-coped layer of the mesa structure.

13. The method of claim 8, wherein said roughening the etched region of the n-doped layer comprises a photo-electrochemical etching process.

14. The method of claim 8, wherein said forming a patterned second dielectric layer comprises exposing a top surface of the mesa region of the n-doped layer of the mesa structure, wherein the top surface of the mesa region of the n-doped layer is recessed from a top surface of the patterned second dielectric layer surrounding the mesa structure.

15. The method of claim 8, wherein said growing an active layer comprises growing the active layer on top of the mesa region of the n-doped layer of the mesa structure to a sufficient thickness so a top surface of the active layer and portions of sidewalls of the active layer are higher than a top surface of the patterned second dielectric layer.

16. The method of claim 15, wherein said growing a p-doped layer comprises:

growing the p-doped layer so the p-doped layer covers the sidewalls of the active layer that are higher than the top surface of the patterned second dielectric layer.

17. The method of claim 8, wherein said forming electrodes comprises:

depositing a current spreading layer on the p-doped layer;

depositing a p-electrode on the current spreading layer; and

depositing an n-electrode on the scattering minor.

18. A light emitting diode(LED) comprising:

a substrate;

an n-doped layer on the substrate, wherein the n-doped layer has a mesa region adjacent to a roughened region, wherein a top surface of the mesa region is higher than a top surface of the roughened region;

an active layer disposed on top of the mesa region of the n-doped layer;

a p-doped layer disposed on the active layer, wherein the p-doped layer caps a top surface and portions of side walls of the active layer; and

electrodes disposed on the p-doped layer and the roughened region of the n-doped layer, wherein the roughened region of the n-doped layer scatters light emitted from the active layer.

19. The LED of claim 18, wherein the roughened region of the n-doped layer is formed without the presence of the active layer.