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Method for manufacturing semiconductor device

  • US 8,592,251 B2
  • Filed: 05/09/2012
  • Issued: 11/26/2013
  • Est. Priority Date: 11/20/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode over a substrate;

    forming a gate insulating film over the substrate and the gate electrode;

    forming an oxide semiconductor layer over the gate insulating film by sputtering;

    performing a heat treatment on the oxide semiconductor layer to reduce a hydrogen concentration of the oxide semiconductor layer;

    supplying oxygen into the oxide semiconductor layer after performing the heat treatment; and

    forming a source electrode and a drain electrode over the oxide semiconductor layer.

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