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Electronic device including a tapered trench and a conductive structure therein and a process of forming the same

  • US 8,592,279 B2
  • Filed: 12/15/2011
  • Issued: 11/26/2013
  • Est. Priority Date: 12/15/2011
  • Status: Active Grant
First Claim
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1. A process of forming an electronic device comprising:

  • providing a semiconductor layer overlying a substrate and having a primary surface;

    patterning the semiconductor layer to define a trench having a tapered portion;

    forming a first insulating layer within the tapered portion;

    forming a sacrificial plug within the tapered portion;

    removing a first portion of the first insulating layer from the tapered portion, wherein the sacrificial plug substantially protects a second portion of the first insulating layer when removing the first portion of the first insulating layer;

    removing the sacrificial plug; and

    forming a conductive electrode at a location from which the sacrificial plug was removed.

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