Method of bonding semiconductor substrate and MEMS device

• US 8,592,285 B2
• Filed: 12/11/2009
• Issued: 11/26/2013
• Est. Priority Date: 12/11/2009
• Status: Active Grant

• Current Assignee: Pioneer Corporation, Pioneer Micro Technology Corporation (Pioneer Corporation)
• Original Assignee: Pioneer Corporation, Pioneer Micro Technology Corporation (Pioneer Corporation)
• Inventors: Noda, Naoki, Yokouchi, Toshio, Ishimori, Masahiro
• Primary Examiner(s): Luu, Chuong A
• Assistant Examiner(s): FORTICH, RODOLFO D
• Application Number:
  US13/513,055
• Publication Number:
  US 20120306032A1
• Time in Patent Office: 1,446 Days
• Field of Search: 438/48, 438/50, 438/51, 438/52, 438/118, 438/455
• US Class Current: 438/455
• CPC Class Codes: B23K 20/023 Thermo-compression bonding
• CPC Class Codes: B23K 20/16 with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
• CPC Class Codes: B23K 20/233 without ferrous layer
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: B81C 2203/035 Soldering

Abstract

A method of bonding a semiconductor substrate has a step of pressurizing and heating to bond a substrate 11 with a substrate 12 by eutectic bonding in a state that an aluminum containing layer 31 and a germanium layer 32 between a bonding section 30a of the substrate 11 and a bonding section 30b of the substrate 21 are overlaid and an outer end 32a of the germanium layer 32 is receded inward with respect to an outer end 31a of the aluminum containing layer 31.

Claims

1. A method of bonding a semiconductor substrate, comprising:

bonding a first semiconductor substrate with a second semiconductor substrate by eutectic bonding with pressurization and heating, an aluminum containing layer primarily made of aluminum and a germanium layer in an overlaid state being interposed between a bonding surface of the first semiconductor substrate and a bonding surface of the second semiconductor substrate;

film-forming the aluminum containing layer on the bonding surface of the second semiconductor substrate and film-forming the germanium layer on the aluminum containing layer;

receding an outer end of the germanium layer inward with respect to an outer end of the aluminum containing layer as to the aluminum containing layer and the germanium layer in the overlaid state; and

broadening a pattern width of the aluminum containing layer than a pattern width of the germanium layer.

2. The method of bonding a semiconductor substrate according to claim 1, wherein heating temperature and heating time of the pressurization and heating is controlled for alloying the germanium layer and the aluminum containing layer by eutectic bonding except an outer end portion of the aluminum containing layer.

3. The method of bonding a semiconductor substrate according to claim 1, wherein the aluminum containing layer and the germanium layer are film-formed on either the first semiconductor substrate or the second semiconductor substrate.

4. The method of bonding a semiconductor substrate according to claim 3, wherein the aluminum containing layer is film-formed in a ring shape in planar view as having predetermined width, and the germanium layer has one or more strip layer sections film-formed in a ring shape in planar view on the aluminum containing layer.

5. The method of bonding a semiconductor substrate according to claim 3, wherein the aluminum containing layer is film-formed in a ring shape in planar view as having predetermined width, and the germanium layer has a strip layer section film-formed in a ring shape in planar view and a plurality of branch layer sections branched from the strip layer section on the aluminum containing layer.

6. The method of bonding a semiconductor substrate according to claim 3, wherein the aluminum containing layer and the germanium layer are film-formed on the second semiconductor substrate and a pit is formed in the bonding surface of the first semiconductor substrate, in which a eutectic alloy generated by the pressurization and heating fills.

7. A MEMS device bonded by the method of bonding a semiconductor substrate according to claim 1, wherein the first semiconductor substrate has a MEMS structure formed to be engraved at the bonding surface side thereof, and the second semiconductor substrate has an integrated circuit formed at the bonding surface side to control the MEMS structure.

8. The MEMS device according to claim 7, wherein the MEMS device is either one of an acceleration sensor, an angular velocity sensor, an infrared ray sensor, a pressure sensor, a magnetic sensor or a sonic sensor.

9. The method of bonding a semiconductor substrate according to claim 2, wherein the aluminum containing layer and the germanium layer are film-formed on either the first semiconductor substrate or the second semiconductor substrate.

10. The method of bonding a semiconductor substrate according to claim 9, wherein the aluminum containing layer is film-formed in a ring shape in planar view as having predetermined width, and the germanium layer has one or more strip layer sections film-formed in a ring shape in planar view on the aluminum containing layer.

11. The method of bonding a semiconductor substrate according to claim 9, wherein the aluminum containing layer is film-formed in a ring shape in planar view as having predetermined width, and the germanium layer has a strip layer section film-formed in a ring shape in planar view and a plurality of branch layer sections branched from the strip layer section on the aluminum containing layer.

12. The method of bonding a semiconductor substrate according to claim 9, wherein the aluminum containing layer and the germanium layer are film-formed on the second semiconductor substrate and a pit is formed in the bonding surface of the first semiconductor substrate, in which a eutectic alloy generated by the pressurization and heating fills.

13. The method of bonding a semiconductor substrate according to claim 4, wherein the aluminum containing layer and the germanium layer are film-formed on the second semiconductor substrate and a pit is formed in the bonding surface of the first semiconductor substrate, in which a eutectic alloy generated by the pressurization and heating fills.

14. The method of bonding a semiconductor substrate according to claim 5, wherein the aluminum containing layer and the germanium layer are film-formed on the second semiconductor substrate and a pit is formed in the bonding surface of the first semiconductor substrate, in which a eutectic alloy generated by the pressurization and heating fills.

15. The method of bonding a semiconductor substrate according to claim 1, wherein a the weight ratio of the germanium layer to the aluminum containing layer is between 27 wt % and 57 wt %, and a sealing ratio of a bonding section after the eutectic bonding is equal to or more than about 50%.

16. The method of bonding a semiconductor substrate according to claim 1, wherein a bonding strength of a bonding section after the eutectic bonding is equal to or more than about 30 N when a weight ratio of the germanium layer to the aluminum containing layer is between 27 wt % and 52 wt %.

17. The method of bonding a semiconductor substrate according to claim 1, wherein a weight ratio of the germanium layer to the aluminum containing layer is between 33 wt % and 42 wt %, a sealing ratio is 100% and a bonding strength is between 41.6 N and 56.3 N.

18. The method of bonding a semiconductor substrate according to claim 1, wherein a weight ratio of the germanium layer to the aluminum containing layer is between 33 wt % and 42 wt %.

19. The method of bonding a semiconductor substrate according to claim 1, wherein the aluminum containing layer has a thickness of 800 nm and the germanium layer has a thickness of 200 nm to 300 nm.