Nitride semiconductor device
First Claim
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1. A nitride semiconductor light emitting device comprising:
- at least a substrate;
a buffer layer formed on said substrate;
an n-type contact layer doped with an n-type impurity for forming an n-electrode, the n-type contact layer being made of a single layer and having a thickness not less than 0.1 μ
m and not more than 20 μ
m;
an active layer where electrons and holes are recombined; and
a p-type contact layer for forming a p-electrode, each layer being made of nitride semiconductor,wherein said n-type contact layer has a first surface on which a first undoped nitride semiconductor layer is directly formed and a second surface on which a second undoped nitride semiconductor layer is directly formed to make a three-layer laminated structure without any other intermediate layers, said three-layer laminated structure being situated between said buffer layer and said active layer.
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Abstract
A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10−3 Ωcm.
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Citations
9 Claims
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1. A nitride semiconductor light emitting device comprising:
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at least a substrate; a buffer layer formed on said substrate; an n-type contact layer doped with an n-type impurity for forming an n-electrode, the n-type contact layer being made of a single layer and having a thickness not less than 0.1 μ
m and not more than 20 μ
m;an active layer where electrons and holes are recombined; and a p-type contact layer for forming a p-electrode, each layer being made of nitride semiconductor, wherein said n-type contact layer has a first surface on which a first undoped nitride semiconductor layer is directly formed and a second surface on which a second undoped nitride semiconductor layer is directly formed to make a three-layer laminated structure without any other intermediate layers, said three-layer laminated structure being situated between said buffer layer and said active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification
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Current AssigneeNichia Corporation
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Original AssigneeNichia Corporation
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InventorsNakamura, Shuji, Mukai, Takashi, Tanizawa, Koji, Mitani, Tomotsugu, Marui, Hiroshi
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Primary Examiner(s)Jackson, Jr., Jerome
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Application NumberUS12/068,063Publication NumberTime in Patent Office2,125 DaysField of Search257/96US Class Current257/96CPC Class CodesH01L 33/06 within the light emitting r...H01L 33/32 containing nitrogenH01L 33/325 characterised by the doping...H01S 5/0421 characterised by the semico...
