Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications

• US 8,592,927 B2
• Filed: 05/04/2011
• Issued: 11/26/2013
• Est. Priority Date: 05/04/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: MagiQ Technologies, Incorporated
• Inventors: Jan, Guenole, Tong, Ru Ying, Kula, Witold
• Primary Examiner(s): Karimy, Timor
• Application Number:
  US13/068,172
• Publication Number:
  US 20120280336A1
• Time in Patent Office: 937 Days
• Field of Search: 257/421, 257/E29.323, 257/E21.665
• US Class Current: 257/421
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Claims

1. A magnetic element comprising a stack of layers including a composite free layer with at least two interfaces that produce interfacial perpendicular anisotropy, comprising:

(a) a tunnel barrier layer;

(b) the composite free layer having a FM1/moment diluting layer/FM2 configuration wherein both of the first ferromagnetic (FM1) layer and second ferromagnetic (FM2) layer are an Fe rich alloy with a Fe content >

50 atomic % or a Co rich alloy with a Co content >

50 atomic %, the FM1 layer has a first interface with the tunnel barrier layer, and the FM2 layer has a second interface with a perpendicular Hk enhancing layer, the first and second interfaces produce interfacial perpendicular anisotropy in the adjoining FM1 and FM2 layers, respectively, such that the interfacial perpendicular anisotropy dominates a shape anisotropy field and thereby establishes perpendicular magnetic anisotropy within the FM1 and FM2 layers; and

(c) the perpendicular Hk enhancing layer.

2. The magnetic element of claim 1 wherein the FM1 and FM2 layers are made of an Fe rich alloy with one or more of Co, Ni, and B.

3. The magnetic element of claim 2 wherein each of the FM1 and FM2 layers have a thickness from about 5 to 20 Angstroms.

4. The magnetic element of claim 1 wherein the moment diluting layer is non-magnetic and is one or more of Ta, Al, Si, B, V, Ti, Mg, Hf, Cr, Cu, Ag, and Au.

5. The magnetic element of claim 1 wherein the moment diluting layer is an alloy of two or more of Co, Ni, and Fe that is doped with one or more of Ta, Al, Si, V, B, Ti, Mg, Hf, Cr, Cu, Ag, Au, or Os wherein the dopant metal content is between 5 and 50 atomic % in the alloy.

6. The magnetic element of claim 1 wherein the perpendicular Hk enhancing layer is MgO, SiOx, SrTiOx, BaTiOx, CaTiOx, LaAlOx, MnOx, VOx, AlOx, TiOx, or HfOx, or one of Ru, Ta, Ti, B, V, Mg, Ag, Au, Cu or Cr.

7. The magnetic element of claim 6 further comprised of magnetic particles made of one or more of Fe, Co, Ni, and B embedded in the perpendicular Hk enhancing layer.

8. The magnetic element of claim 1 wherein the tunnel barrier layer is comprised of MgO, AlOx, TiOx, or HfOx, or is a laminate of one or more of the aforementioned oxides.

9. The magnetic element of claim 1 wherein the magnetic element is part of a magnetic tunnel junction (MTJ) and an array of said MTJs is used for digital storage in a MRAM, spin transfer MRAM, or another spintronic device.

10. The magnetic element of claim 1 wherein the FM1 and FM2 layers are a Co rich alloy with one or more of Fe, Ni, and B.

11. A magnetic tunnel junction with a bottom spin valve configuration, comprising:

(a) a seed layer formed on a substrate;

(b) a pinned layer formed on the seed layer;

(c) a tunnel barrier contacting a top surface of the pinned layer;

(d) a composite free layer having a FM1/moment diluting layer/FM2 configuration wherein the first ferromagnetic (FM1) layer has a first interface with the tunnel barrier layer and the second ferromagnetic (FM2) layer has a second interface with a bottom surface of a perpendicular Hk enhancing layer, the first and second interfaces produce interfacial perpendicular anisotropy in the adjoining FM1 and FM2 layers, respectively, such that the interfacial perpendicular anisotropy dominates a shape anisotropy field and thereby establishes perpendicular magnetic anisotropy within the FM1 and FM2 layers;

(e) the perpendicular Hk enhancing layer; and

(f) a capping layer that contacts a top surface of the perpendicular Hk enhancing layer.

12. The magnetic tunnel junction of claim 11 wherein the FM1 and FM2 layers each have a thickness from about 5 to 20 Angstroms and are made of an Fe rich alloy with one or more of Co, Ni, and B, or are a Co rich alloy with one or more of Fe, Ni, and B.

13. The magnetic tunnel junction of claim 11 wherein the moment diluting layer is non-magnetic and is one or more of Ta, Al, Si, B, V, Ti, Mg, Hf, Cr, Cu, Ag, and Au.

14. The magnetic tunnel junction of claim 11 wherein the moment diluting layer is an alloy of two or more of Co, Ni, and Fe that is doped with one or more of Ta, Al, Si, V, B, Ti, Mg, Hf, Cr, Cu, Ag, Au, or Os wherein the dopant metal content is between 5 and 50 atomic % in the alloy.

15. The magnetic tunnel junction of claim 11 wherein the perpendicular Hk enhancing layer is a single layer or a laminate comprised of one or more oxides selected from MgO, SiOx, SrTiOx, BaTiOx, CaTiOx, LaAlOx, MnOx, VOx, AlOx, TiOx, and HfOx, and has a resistance x area (RA) value less than a RA value of the tunnel barrier layer.

16. The magnetic tunnel junction of claim 15 further including magnetic particles comprised of one or more of Fe, Co, Ni, and B that are embedded in the perpendicular Hk enhancing layer.

17. The magnetic tunnel junction of claim 16 wherein the tunnel barrier layer and perpendicular Hk enhancing layer are both comprised of MgO and the capping layer is made of Ru.

18. A domain wall motion device, comprising:

(a) a pinned magnetic layer having a first width;

(b) a tunnel barrier contacting a top surface of the pinned layer;

(c) a composite free layer having a width substantially larger than the first width and with a FM1/moment diluting layer/FM2 configuration wherein the first ferromagnetic (FM1) layer has a first interface with the tunnel barrier layer and the second ferromagnetic (FM2) layer has a second interface with a bottom surface of a perpendicular Hk enhancing layer, the first and second interfaces produce interfacial perpendicular anisotropy in the adjoining FM1 and FM2 layers, respectively, such that the interfacial perpendicular anisotropy dominates a shape anisotropy field and thereby establishes perpendicular magnetic anisotropy within the FM1 and FM2 layers, and wherein domain walls extend vertically through the composite free layer to establish magnetic domains including a switchable magnetic domain aligned above the pinned magnetic layer;

(d) the perpendicular Hk enhancing layer; and

(e) a capping layer that contacts a top surface of the perpendicular Hk enhancing layer, the domain wall motion device is electrically connected to a current/voltage source and to a readout device to enable read and write processes.

19. The domain wall motion device of claim 18 wherein the moment diluting layer is made of one or more of Ta, Al, Si, B, V, Ti, Mg, Hf, Cr, Cu, Ag, Au, and Os.

20. The domain wall motion device of claim 18 wherein the perpendicular Hk enhancing layer is a single layer or a laminate comprised of one or more oxides selected from MgO, SiOx, SrTiOx, BaTiOx, CaTiOx, LaAlOx, MnOx, VOx, AlOx, TiOx, and HfOx.

21. The domain wall motion device of claim 18 wherein the composite free layer is part of a wire in an array of wires that is used to store digital information.