Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device

• US 8,592,936 B2
• Filed: 06/21/2012
• Issued: 11/26/2013
• Est. Priority Date: 02/15/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kusumoto, Naoto, Nishi, Kazuo, Sugawara, Yuusuke
• Primary Examiner(s): Rizkallah, Kimberly
• Assistant Examiner(s): Ligai, Maria
• Application Number:
  US13/528,878
• Publication Number:
  US 20120256286A1
• Time in Patent Office: 523 Days
• Field of Search: 257/433, 257/458, 257/459, 257/698, 257E21124-E31126, 257/81, 257/100, 257/E33.065, 257/E33.066, 257/E33.062, 438/64, 438/98, 438/26
• US Class Current: 257/459
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 31/147 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: H01L 31/153 formed in, or on, a common substrate

Abstract

A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.

Claims

1. A semiconductor device comprising:

a substrate comprising an insulating surface;

a semiconductor layer over the substrate;

a first insulating layer over the substrate, the first insulating layer covering a portion of a side surface of the semiconductor layer;

a second insulating layer covering a portion of a top surface and whole of side surfaces of the first insulating layer;

a first electrode over the second insulating layer; and

a second electrode over the second insulating layer,

wherein each of the first and second electrodes continuously extends from a top surface of the second insulating layer to a portion of a side surface of the substrate.

2. The semiconductor device according to claim 1, wherein the semiconductor layer comprises a stacked-structure of a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer.

3. The semiconductor device according to claim 1, wherein the first insulating layer is formed over the semiconductor layer.

4. The semiconductor device according to claim 1, further comprising:

first and second output terminals formed over the second insulating layer, the first output terminal being electrically connected to the semiconductor layer;

wherein each of the first and second output terminals is a taper shape, and

wherein each of the first and second electrodes covers the whole of top surfaces of the first and second output terminals, respectively.

5. An electronic device comprising the semiconductor device according to claim 1.

6. The semiconductor device according to claim 1, wherein an edge portion of the second insulating layer is cut away to slope cross section.

7. The semiconductor device according to claim 1, wherein edge portions of the substrate and the second insulating layer are cut away to slope cross section continuously.

8. The semiconductor device according to claim 1, wherein a portion of the second insulating layer is in contact with a portion of the insulating surface.

9. A semiconductor device comprising:

a substrate comprising an insulating surface;

a photoelectric conversion layer over the substrate;

a first insulating layer over the substrate, the first insulating layer covering a portion of a side surface of the photoelectric conversion layer;

a second insulating layer covering a portion of a top surface and whole of side surfaces of the first insulating layer;

a first electrode over the second insulating layer; and

a second electrode over the second insulating layer,

wherein each of the first and second electrodes continuously extends from a top surface of the second insulating layer to a portion of a side surface of the substrate.

10. The semiconductor device according to claim 9, wherein the photoelectric conversion layer comprises a stacked-structure of a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer.

11. The semiconductor device according to claim 9, wherein the first insulating layer is formed over the photoelectric conversion layer.

12. The semiconductor device according to claim 9, further comprising:

first and second output terminals formed over the second insulating layer, the first output terminal being electrically connected to the photoelectric conversion layer;

wherein each of the first and second output terminals is a taper shape, and

wherein each of the first and second electrodes covers the whole of top surfaces of the first and second output terminals, respectively.

13. An electronic device comprising the semiconductor device according to claim 9.

14. The semiconductor device according to claim 9, wherein an edge portion of the second insulating layer is cut away to slope cross section.

15. The semiconductor device according to claim 9, wherein edge portions of the substrate and the second insulating layer are cut away to slope cross section continuously.

16. The semiconductor device according to claim 9, wherein a portion of the second insulating layer is in contact with a portion of the insulating surface.