Thermally controlled refractory metal resistor

• US 8,592,947 B2
• Filed: 12/08/2010
• Issued: 11/26/2013
• Est. Priority Date: 12/08/2010
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Lukaitis, Joseph M., Massey, Deborah M., Sullivan, Timothy D., Wang, Ping-Chuan, Watson, Kimball M.
• Primary Examiner(s): Smoot, Stephen W
• Application Number:
  US12/962,722
• Publication Number:
  US 20120146186A1
• Time in Patent Office: 1,084 Days
• Field of Search: 257/E23.109
• US Class Current: 257/536
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/5228 Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 27/0211 adapted for requirements of temperature
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 28/24 with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A structure and method of fabricating the structure includes a semiconductor substrate having a top surface defining a horizontal direction and a plurality of interconnect levels stacked from a lowermost level proximate the top surface of the semiconductor substrate to an uppermost level furthest from the top surface. Each of the interconnect levels include vertical metal conductors physically connected to one another in a vertical direction perpendicular to the horizontal direction. The vertical conductors in the lowermost level being physically connected to the top surface of the substrate, and the vertical conductors forming a heat sink connected to the semiconductor substrate. A resistor is included in a layer immediately above the uppermost level. The vertical conductors being aligned under a downward vertical resistor footprint of the resistor, and each interconnect level further include horizontal metal conductors positioned in the horizontal direction and being connected to the vertical conductors.

Claims

1. A structure comprising:

a semiconductor substrate having a top surface, said top surface defining a horizontal direction;

a plurality of interconnect levels stacked from a lowermost level proximate said top surface of said semiconductor substrate to an uppermost level furthest from said top surface of said substrate, each of said interconnect levels comprising vertical metal conductors physically connected to one another in a vertical direction perpendicular to said horizontal direction, said vertical conductors in said lowermost level being physically connected to said top surface of said substrate, and said vertical conductors forming a heat sink connected to said semiconductor substrate; and

a layer immediately above said uppermost level comprising a resistor,

said vertical conductors being aligned under a downward vertical resistor footprint of said resistor, and

each interconnect level further comprising horizontal metal conductors positioned in said horizontal direction and being connected to said vertical conductors.

2. The structure of claim 1, each of said vertical metal conductors and said horizontal metal conductors further comprising an array of integrally formed parallel wires and vias,

each of said vias being vertically aligned in said vertical direction with other vias of adjacent levels.

3. The structure of claim 1, each of said vertical metal conductors and said horizontal metal conductors further comprising a horizontal two-dimensional array positioned in said horizontal direction and including a metal plate having fill shape vias,

each of said fill shape vias being vertically aligned in said vertical direction with other fill shape vias of adjacent levels.

4. The structure of claim 1, each of said vertical metal conductors and said horizontal metal conductors being aligned completely inside said downward vertical resistor footprint of said resistor.

5. The structure of claim 1, said vertical metal conductors and said horizontal metal conductors being aligned dimensionally equal with said downward vertical resistor footprint of said resistor.

6. The structure of claim 1, a portion of said vertical metal conductors and said horizontal metal conductors being outside said downward vertical resistor footprint of said resistor in said horizontal direction.

7. The structure of claim 6, said portion of said vertical metal conductors and said horizontal metal conductors outside said downward vertical resistor footprint of said resistor being progressively increasing in lateral width in said horizontal direction from said uppermost level to said lowermost level.

8. The structure of claim 1, said resistor further comprising a layer of one of a refractory metal and/or a refractory metal nitride.

9. A structure comprising:

a semiconductor substrate having a top surface, said top surface defining a horizontal direction;

a plurality of interconnect levels stacked from a lowermost level proximate said top surface of said semiconductor substrate to an uppermost level furthest from said top surface of said substrate, each of said interconnect levels comprising vertical conductors physically connected to one another in a vertical direction perpendicular to said horizontal direction, said vertical conductors in said lowermost level being physically connected to said top surface of said substrate, and said vertical conductors forming a heat sink connected to said semiconductor substrate;

a layer immediately above said uppermost level of the heat sink comprising a resistor; and

a heat shield formed from a metal layer immediately above said resistor, said heat shield substantially inhibiting thermal radiation in an upward vertical direction from said resistor, and said heat shield being electrically isolated from the resistor,

said heat shield connected to the plurality of interconnect levels forming the heat sink immediately below said resistor.

said plurality of interconnect levels aligned under a downward vertical resistor footprint of said resistor, and

each interconnect level further comprising horizontal metal conductors positioned in said horizontal direction and being connected to said vertical conductors.

10. The structure of claim 9, each of said vertical conductors and said horizontal metal conductors further comprising an array of integrally formed parallel wires and vias,

each of said vias being vertically aligned in said vertical direction with other vias of adjacent levels.

11. The structure of claim 9, each of said vertical conductors and said horizontal metal conductors further comprising a horizontal two-dimensional array positioned in said horizontal direction and including a metal plate having fill shape vias,

each of said fill shape vias being vertically aligned in said vertical direction with other fill shape vias of adjacent levels.

12. The structure of claim 9, each of said vertical conductors and said horizontal metal conductors being aligned completely inside said downward vertical resistor footprint of said resistor.

13. The structure of claim 9, said vertical conductors and said horizontal metal conductors being aligned dimensionally equal with said downward vertical resistor footprint of said resistor.

14. The structure of claim 9, a portion of said vertical conductors and said horizontal metal conductors being outside said downward vertical resistor footprint of said resistor in said horizontal direction.

15. The structure of claim 9, said vertical and horizontal conductors of said lowermost level contacting said semiconductor substrate through a buried oxide layer.

16. The structure of claim 9, said resistor further comprising a layer of one of a refractory metal and/or a refractory metal nitride.