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Semiconductor device and method of forming vertical interconnect structure with conductive micro via array for 3-D Fo-WLCSP

  • US 8,592,992 B2
  • Filed: 12/14/2011
  • Issued: 11/26/2013
  • Est. Priority Date: 12/14/2011
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a semiconductor die;

    forming an encapsulant over the semiconductor die; and

    forming a first through-mold-hole (TMH) through the encapsulant and including a step-through-hole structure.

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