Semiconductor device and method of forming vertical interconnect structure with conductive micro via array for 3-D Fo-WLCSP
First Claim
1. A method of making a semiconductor device, comprising:
- providing a semiconductor die;
forming an encapsulant over the semiconductor die; and
forming a first through-mold-hole (TMH) through the encapsulant and including a step-through-hole structure.
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Accused Products
Abstract
A semiconductor device has a semiconductor die. An encapsulant is formed over the semiconductor die. A conductive micro via array is formed over the encapsulant outside a footprint of the semiconductor die. A first through-mold-hole having a step-through-hole structure is formed through the encapsulant to expose the conductive micro via array. In one embodiment, forming the conductive micro via array further includes forming an insulating layer over the encapsulant and the semiconductor die, forming a micro via array through the insulating layer outside the footprint of the semiconductor die, and forming a conductive layer over the insulating layer. In another embodiment, forming the conductive micro via array further includes forming a conductive ring. In another embodiment, an insulating layer is formed over the semiconductor die for structural support, a build-up interconnect structure is formed over the semiconductor die, and a conductive interconnect structure is formed within the first through-mold-hole.
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Citations
30 Claims
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1. A method of making a semiconductor device, comprising:
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providing a semiconductor die; forming an encapsulant over the semiconductor die; and forming a first through-mold-hole (TMH) through the encapsulant and including a step-through-hole structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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a semiconductor die; an encapsulant formed over the semiconductor die; a conductive micro via array formed over the semiconductor die and the encapsulant outside a footprint of the semiconductor die; and a first through-mold-hole (TMH) having a step-through-hole structure formed through the encapsulant to expose the conductive micro via array. - View Dependent Claims (9, 10, 11, 12)
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13. A semiconductor device, comprising:
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a semiconductor die; an encapsulant formed over the semiconductor die; and a conductive micro via array including a plurality of conductive vias formed over the encapsulant and outside a footprint of the semiconductor die. - View Dependent Claims (14, 15, 16, 17, 18, 24)
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19. A semiconductor device, comprising:
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a semiconductor die; an encapsulant formed over the semiconductor die; and a first through-mold-hole (TMH) formed through the encapsulant and including a step-through-hole structure. - View Dependent Claims (20, 21, 22, 23, 25)
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26. A semiconductor device, comprising:
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a semiconductor die; an encapsulant formed over the semiconductor die; an insulating layer formed over the encapsulant; and a conductive micro via array formed through the insulating layer. - View Dependent Claims (27, 28, 29, 30)
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Specification