High-efficiency MEMS micro-vibrational energy harvester and process for manufacturing same

• US 8,593,036 B2
• Filed: 02/18/2011
• Issued: 11/26/2013
• Est. Priority Date: 02/26/2010
• Status: Expired due to Fees

• Current Assignee: MCB Clean Room Solutions, LLC
• Original Assignee: MCB Clean Room Solutions, LLC
• Inventors: Boysel, Robert Mark
• Primary Examiner(s): Dougherty, Thomas
• Assistant Examiner(s): Addison, Karen B
• Application Number:
  US13/030,182
• Publication Number:
  US 20110210554A1
• Time in Patent Office: 1,012 Days
• Field of Search: 310/339, 310/338, 310/319, 310/322, 310330-332, 310/329, 310/324, 29/253.5
• US Class Current: 310/339
• CPC Class Codes: H02N 2/188 adapted for resonant operation
• CPC Class Codes: H10N 30/01 Manufacture or treatment
• CPC Class Codes: H10N 30/306 Cantilevers
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

The present invention relates generally to a High Efficiency MEMS Micro-Vibrational Energy Harvester (μVEH) having a thick beam bimorph architecture. The disclosed architecture is capable of producing a voltage of sufficient magnitude such that the requirement to connect a plurality of harvesters in series to produce an adequate voltage magnitude is eliminated.

Claims

1. A vibrational energy harvesting device comprising:

a cantilever having a first end, a second end and a core having a first planar surface and a second planar surface, the core being fabricated as two plate layers and bonded together;

a first piezoelectric stack having a piezoelectric material placed between a first conductive layer and a second conductive layer and attached to the first planar surface of said core;

a second piezoelectric stack having a piezoelectric material placed between a first conductive layer and a second conductive layer and attached to the second planar surface of said core; and

a casing wherein the first end of the cantilever is joined to the casing and the second end is free to move.

2. The vibrational energy harvesting device as recited in claim 1, further comprising a proof mass mechanically couple to the second end of the cantilever.

3. The vibrational energy harvesting device as recited in claim 1, further comprising an electrical contact operatively coupled to said first piezoelectric stack.

4. The vibrational energy harvesting device as recited in claim 1, further comprising an electrical contact operatively coupled to said second piezoelectric stack.

5. The vibrational energy harvesting device as recited in claim 1, wherein said core is gold.

6. The vibrational energy harvesting device as recited in claim 1, wherein said core is copper.

7. The vibrational energy harvesting device as recited in claim 1. wherein said core is nickel.

8. The vibrational energy harvesting device as recited in claim 1, wherein said piezoelectric material is aluminum nitride.

9. The vibrational energy harvesting device as recited in claim 1, wherein said casing is silicon.

10. The vibrational energy harvesting device as recited in claim 1, wherein said cantilever is rectangular.

11. The vibrational energy harvesting device recited in claim 1, wherein said cantilever is trapezoidal.

12. The vibrational energy harvesting device as recited in claim 1, further comprising a first cap and a second cap.

13. The vibrational energy harvesting device as recited in claim 12, further comprising an inert gas contained within the first cap and the second cap.

14. The vibrational energy harvesting device as recited in claim 12, further comprising a gas at a pressure less than one atmosphere contained within the first cap and the second cap.

15. A method for fabricating the vibrational energy harvesting device of claim 1 comprising the steps of:

creating a first wafer set and a second wafer set by

forming an oxide layer on a substrate;

depositing a first and second piezoelectric stack on the substrate;

patterning a first electrode;

patterning a piezoelectric material;

patterning a second electrode;

depositing bond pads;

depositing a contact layer;

etching contacts in said contact layer;

patterning a core layer;

aligning, the plate layer of the first wafer set with the plate layer of the second wafer set;

bonding said first wafer set to said second wafer set to form a core;

patterning a resulting vibrational energy harvesting device; and

singulating and releasing the resulting vibrational energy harvesting device.

16. The method as recited in claim 15, wherein said core layer is formed by the steps of depositing a seed layer and plating said seed layer.

17. The method as recited in claim 15, further comprising the step of capping the resulting vibrational energy harvesting device.

18. The method as recited in claim 15, further comprising the step of wire bonding the resulting vibrational energy harvesting device.

19. The method as recited in claim 15, further comprising the step of packaging the resulting vibrational energy harvesting device.

20. An energy harvesting circuit comprising:

a vibrational energy harvesting device in accordance with claim 1;

a power rectification circuit for converting oscillatory current electric power to direct current electric power; and

an energy storage device.

21. The energy harvesting circuit as recited in claim 20 wherein the energy storage device is a battery.

22. The energy harvesting circuit as recited in claim 20 wherein the energy storage device is a capacitor.

23. A chipset having a substrate and a vibrational energy harvesting device comprising a cantilever having a first end, a second end and a core having a first planar surface and a second planar surface, the core being fabricated as two plate layers and bonded together;

a first piezoelectric stack having a piezoelectric material placed between a first conductive layer and a second conductive layer and attached to the first planar surface of said core;

a second piezoelectric stack having a piezoelectric material placed between a first conductive layer and a second conductive layer and attached to the second planar surface of said core; and

a casing wherein the first end of the cantilever is joined to the casing and the second end is free to move.

24. The chipset as recited in claim 23 wherein the substrate is silicon.

25. The chipset as recited in claim 23, further comprising a proof mass mechanically coupled to the second end of the cantilever.