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Power semiconductor module and method for operating a power semiconductor module

  • US 8,593,817 B2
  • Filed: 09/30/2010
  • Issued: 11/26/2013
  • Est. Priority Date: 09/30/2009
  • Status: Active Grant
First Claim
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1. A power semiconductor module for use in a converter, which has a rectifier circuit and an inverter circuit, comprising:

  • a housing;

    a first power semiconductor chip, which is a component part of the rectifier circuit and has a first semiconductor body with an upper chip metallization and a lower chip metallization;

    a second power semiconductor chip, which is a component part of the inverter circuit and has a second semiconductor body with an upper chip metallization and a lower chip metallization; and

    at least one ceramic substrate;

    wherein the first power semiconductor chip and the second power semiconductor chip are arranged in the housing;

    wherein the upper chip metallization of the first power semiconductor chip is adjoined by an aluminum-based bonding wire with an aluminum fraction of at least 99% by weight aluminum;

    wherein the upper chip metallization of the second power semiconductor chip is adjoined by a copper-based bonding wire with a copper fraction of at least 99% by weight copper; and

    wherein the lower chip metallization of the first power semiconductor chip is adjoined directly by a fusion soldering layer or the lower chip metallization of the second power semiconductor chip is adjoined directly by one of the following;

    a silver-containing sintering layer;

    an adhesive bonding layer or a diffusion soldering layer.

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