Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy
First Claim
1. A spin-torque transfer memory random access memory (STTMRAM) element comprising:
- a fixed layer having a first magnetization that is substantially fixed in one direction and formed on top of a substrate;
a tunnel layer formed upon the fixed layer; and
a composite free layer having a second magnetization that is switchable in two directions and formed upon the tunnel layer and made of an iron platinum alloy including at least one of X material and at least one of Y material, wherein X comprises;
phosphorous (P), and nitrogen (N) and Y comprises;
silicon (Si), aluminum (Al), tin (Sn), lead (Pb), antimony (Sb), and bismuth (Bi), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate,wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the second magnetization between parallel and anti-parallel states relative to the first magnetization.
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Accused Products
Abstract
A spin-torque transfer memory random access memory (STTMRAM) element includes a fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer and made of an iron platinum alloy with at least one of X or Y material, X being from a group consisting of: boron (B), phosphorous (P), carbon (C), and nitride (N) and Y being from a group consisting of: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo) or rhodium (Ru), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate.
31 Citations
18 Claims
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1. A spin-torque transfer memory random access memory (STTMRAM) element comprising:
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a fixed layer having a first magnetization that is substantially fixed in one direction and formed on top of a substrate; a tunnel layer formed upon the fixed layer; and a composite free layer having a second magnetization that is switchable in two directions and formed upon the tunnel layer and made of an iron platinum alloy including at least one of X material and at least one of Y material, wherein X comprises;
phosphorous (P), and nitrogen (N) and Y comprises;
silicon (Si), aluminum (Al), tin (Sn), lead (Pb), antimony (Sb), and bismuth (Bi), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate,wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the second magnetization between parallel and anti-parallel states relative to the first magnetization. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A spin-torque transfer memory random access memory (STTMRAM) element comprising:
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a composite fixed layer having a first magnetization that is substantially fixed in one direction, the composite fixed layer formed on top of a substrate; a tunnel layer formed upon the composite fixed layer; and a composite free layer having a second magnetization that is switchable, formed upon the tunnel layer and made of an enhanced spin-polarization interface layer (SPEL), a non-magnetic spacing layer and a sub-free layer, the SPEL being formed on top of the tunnel layer, the non-magnetic spacing layer formed on top of the SPEL and the sub-free layer formed on top of the non-magnetic spacing layer, the composite free layer having a second magnetization that is switchable in two directions and made of an iron platinum alloy including at least one of X material and at least one of Y material, wherein X comprises;
phosphorous (P), and nitrogen (N) and wherein Y comprises;
silicon (Si), aluminum (Al), tin (Sn), lead (Pb), antimony (Sb), and bismuth (Bi), the magnetization direction of each of the composite free layer and the composite fixed layer being substantially perpendicular to the plane of the substrate; anda cap layer formed on top of the sub-free layer, wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the second magnetization between parallel and anti-parallel states relative to the first magnetization. - View Dependent Claims (13)
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14. A spin-torque transfer memory random access memory (STTMRAM) element comprising:
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a composite fixed layer having a first magnetization that is substantially fixed in one direction, the composite fixed layer formed on top of a substrate; a tunnel layer formed upon the composite fixed layer; and a composite free layer having a second magnetization that is switchable, and formed upon the tunnel layer and made of an enhanced spin-polarization interface layer (SPEL), and the composite free layer having a second magnetization that is switchable in two directions and made of an iron platinum alloy including at least one of X material and at least one of Y material, wherein X comprises;
phosphorous (P), and nitrogen (N) and wherein Y comprises;
silicon (Si), aluminum (Al), tin (Sn), lead (Pb), antimony (Sb), and bismuth (Bi), the magnetization direction of each of the composite free layer and the composite fixed layer being substantially perpendicular to the plane of the substrate; anda cap layer formed on top of the composite free layer; wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the second magnetization between parallel and anti-parallel states relative to the first magnetization. - View Dependent Claims (15, 16, 17, 18)
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Specification