Stacked CMOS power amplifier and RF coupler devices and related methods
First Claim
1. A stacked CMOS power amplifier (PA) and radio frequency (RF) coupler device, comprising:
- a CMOS power amplifier (PA) die configured to receive a transmit input signal and to output an amplified transmit signal; and
a radio frequency (RF) coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal;
wherein the CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other; and
wherein the CMOS PA die and the RF coupler device are combined within a single semiconductor package.
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Accused Products
Abstract
Stacked CMOS power amplifier (PA) and radio frequency (RF) coupler devices and related methods are disclosed. The stacked device includes a CMOS PA die configured to receive a transmit input signal and to output an amplified transmit signal, and a RF coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal. The CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other, and the CMOS PA die and the RF coupler device are combined within a single semiconductor package. In some embodiments, the RF coupler device is positioned on top of the CMOS PA die, and in other embodiments the CMOS PA die is positioned on top of the RF coupler device.
14 Citations
19 Claims
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1. A stacked CMOS power amplifier (PA) and radio frequency (RF) coupler device, comprising:
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a CMOS power amplifier (PA) die configured to receive a transmit input signal and to output an amplified transmit signal; and a radio frequency (RF) coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal; wherein the CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other; and wherein the CMOS PA die and the RF coupler device are combined within a single semiconductor package. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for making a stacked CMOS power amplifier (PA) and radio frequency (RF) coupler device, comprising:
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providing a CMOS power amplifier (PA) die configured to receive a transmit input signal and to output an amplified transmit signal; and providing a radio frequency (RF) coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal; stacking the CMOS PA die and the RF coupler device on top of each other; electrically coupling the CMOS PA die and the RF coupler device to each other; and packaging the CMOS PA die and the RF coupler device into a single semiconductor package. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A method for making a stacked CMOS power amplifier (PA) and radio frequency (RF) coupler device, comprising:
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providing a CMOS power amplifier (PA) die configured to receive a transmit input signal and to output an amplified transmit signal; and directly integrating a radio frequency (RF) coupler device on top of the CMOS PA die, the RF coupler device being configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal; and packaging the CMOS PA die and the RF coupler device into a single semiconductor package.
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Specification