Power MOS device fabrication
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- forming a mask on a substrate having a top substrate surface;
forming a gate trench in the substrate, through the mask;
depositing gate material in the gate trench;
removing the mask to leave a gate structure;
implanting a body region;
implanting a source region;
forming a source body contact trench having a trench wall and a trench bottom;
forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region;
disposing conductive material in the source body contact trench, on top of the plug;
disposing a conductive contact layer along at least a portion of the trench wall, wherein the conductive contact layer is in contact with at least a portion of the source region; and
forming a drain;
wherein;
the conductive contact layer and the drain form a Schottky diode.
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Abstract
Fabricating a semiconductor device includes forming a mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the mask; depositing gate material in the gate trench; removing the mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region; and disposing conductive material in the source body contact trench, on top of the plug.
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Citations
17 Claims
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1. A method of fabricating a semiconductor device, comprising:
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forming a mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the mask; depositing gate material in the gate trench; removing the mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region; disposing conductive material in the source body contact trench, on top of the plug; disposing a conductive contact layer along at least a portion of the trench wall, wherein the conductive contact layer is in contact with at least a portion of the source region; and forming a drain;
wherein;the conductive contact layer and the drain form a Schottky diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of fabricating a semiconductor device, comprising:
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forming a mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the mask; depositing gate material in the gate trench; removing the mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region; disposing conductive material in the source body contact trench, on top of the plug; and disposing an anti-punch through implant along at least a section of the trench wall but not along the trench bottom;
whereinthe anti-punch through implant does not extend substantially below top surface of the plug.
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17. A method of fabricating a semiconductor device, comprising:
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forming a mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the mask; depositing gate material in the gate trench; removing the mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region; disposing conductive material in the source body contact trench, on top of the plug; and disposing a conductive contact layer along at least a portion of the trench wall, wherein the plug comprises a dielectric material overlaying a portion of the conductive contact layer.
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Specification