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Power MOS device fabrication

  • US 8,597,998 B2
  • Filed: 09/05/2012
  • Issued: 12/03/2013
  • Est. Priority Date: 02/11/2005
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, comprising:

  • forming a mask on a substrate having a top substrate surface;

    forming a gate trench in the substrate, through the mask;

    depositing gate material in the gate trench;

    removing the mask to leave a gate structure;

    implanting a body region;

    implanting a source region;

    forming a source body contact trench having a trench wall and a trench bottom;

    forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region;

    disposing conductive material in the source body contact trench, on top of the plug;

    disposing a conductive contact layer along at least a portion of the trench wall, wherein the conductive contact layer is in contact with at least a portion of the source region; and

    forming a drain;

    wherein;

    the conductive contact layer and the drain form a Schottky diode.

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