Method for producing a semiconductor element
First Claim
1. A method for producing an optoelectronic component, in which a semiconductor layer based on a III-V-compound semiconductor material is separated from a substrate by irradiation with a laser beam, wherein individual regions of the semiconductor layer are irradiated successively such that each region is radiated in a single radiation step and said regions are arranged in rows and columns before irradiation or during irradiation.
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Abstract
Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.
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27 Claims
- 1. A method for producing an optoelectronic component, in which a semiconductor layer based on a III-V-compound semiconductor material is separated from a substrate by irradiation with a laser beam, wherein individual regions of the semiconductor layer are irradiated successively such that each region is radiated in a single radiation step and said regions are arranged in rows and columns before irradiation or during irradiation.
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