Sputtering target and thin film transistor equipped with same
First Claim
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1. A sintered body comprising an oxide that comprises In, Ga and Zn at the following atomic ratio and comprises as a main component a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO):
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0.28≦
Zn/(In+Zn+Ga)≦
0.38
0.18≦
Ga/(In+Zn+Ga)≦
0.28,wherein the sintered body has a relative density of 90% or more, a specific resistance of 15 mΩ
cm or less, a surface roughness of 2 μ
m or less and an average crystal diameter of 10 μ
m or less.
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Abstract
A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO):
0.28≦Zn/(In+Zn+Ga)≦0.38
0.18≦Ga/(In+Zn+Ga)≦0.28.
21 Citations
9 Claims
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1. A sintered body comprising an oxide that comprises In, Ga and Zn at the following atomic ratio and comprises as a main component a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO):
-
0.28≦
Zn/(In+Zn+Ga)≦
0.38
0.18≦
Ga/(In+Zn+Ga)≦
0.28,wherein the sintered body has a relative density of 90% or more, a specific resistance of 15 mΩ
cm or less, a surface roughness of 2 μ
m or less and an average crystal diameter of 10 μ
m or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification