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Sputtering target and thin film transistor equipped with same

  • US 8,598,578 B2
  • Filed: 11/18/2010
  • Issued: 12/03/2013
  • Est. Priority Date: 11/19/2009
  • Status: Active Grant
First Claim
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1. A sintered body comprising an oxide that comprises In, Ga and Zn at the following atomic ratio and comprises as a main component a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO):


  • 0.28≦

    Zn/(In+Zn+Ga)≦

    0.38
    0.18≦

    Ga/(In+Zn+Ga)≦

    0.28,wherein the sintered body has a relative density of 90% or more, a specific resistance of 15 mΩ

    cm or less, a surface roughness of 2 μ

    m or less and an average crystal diameter of 10 μ

    m or less.

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