Light-emitting devices
First Claim
1. A light-emitting device, comprising:
- a semiconductor layer sequence comprising a first main side, a second main side, and an active layer;
a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end;
a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side;
a first metal layer formed on the dielectric layer, wherein part of the semiconductor layer sequence contacts the first metal layer near the bottom end;
a carrier substrate; and
a first connection layer connecting the carrier substrate and the semiconductor layer sequence,wherein the semiconductor layer sequence further comprises a first semiconductor layer having a first electrical conductivity and a second semiconductor layer having a second electrical conductivity, and the active layer is interposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is near the first main side, andwherein the second semiconductor layer is near the top end, the first semiconductor layer is near the bottom end, and the first metal layer formed on the second semiconductor layer is connected to the first semiconductor layer and insulated with the second semiconductor layer by the dielectric layer.
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Accused Products
Abstract
A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.
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Citations
19 Claims
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1. A light-emitting device, comprising:
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a semiconductor layer sequence comprising a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end; a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer, wherein part of the semiconductor layer sequence contacts the first metal layer near the bottom end; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence, wherein the semiconductor layer sequence further comprises a first semiconductor layer having a first electrical conductivity and a second semiconductor layer having a second electrical conductivity, and the active layer is interposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is near the first main side, and wherein the second semiconductor layer is near the top end, the first semiconductor layer is near the bottom end, and the first metal layer formed on the second semiconductor layer is connected to the first semiconductor layer and insulated with the second semiconductor layer by the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A light-emitting device, comprising:
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a semiconductor layer sequence comprising a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end; a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; a conductive protruding structure, wherein the beveled trench accommodates the conductive protruding structure; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification