MOSFET device with thick trench bottom oxide
First Claim
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1. An apparatus, comprising:
- a substrate;
an epitaxial layer disposed on the substrate;
a first trench within the epitaxial layer;
a trench oxide disposed within the first trench and having a trench bottom oxide portion disposed below a gate portion of the trench oxide, the trench bottom oxide excluding a shield electrode; and
a second trench disposed lateral to the first trench, the trench bottom oxide of the trench oxide having a thickness greater than a distance within the epitaxial layer between the first trench and the second trench, the epitaxial layer having a portion disposed between a bottom surface of the first trench and the substrate.
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Abstract
In one general aspect, an apparatus can include a first trench oxide disposed within a first trench of an epitaxial layer and having a trench bottom oxide disposed below a gate portion of the first trench oxide. The apparatus can include a second trench disposed lateral to the first trench. The trench bottom oxide portion of the first oxide can have a thickness greater than a distance within the epitaxial layer from the first trench to the second trench.
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Citations
21 Claims
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1. An apparatus, comprising:
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a substrate; an epitaxial layer disposed on the substrate; a first trench within the epitaxial layer; a trench oxide disposed within the first trench and having a trench bottom oxide portion disposed below a gate portion of the trench oxide, the trench bottom oxide excluding a shield electrode; and a second trench disposed lateral to the first trench, the trench bottom oxide of the trench oxide having a thickness greater than a distance within the epitaxial layer between the first trench and the second trench, the epitaxial layer having a portion disposed between a bottom surface of the first trench and the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An apparatus, comprising:
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a substrate; a first trench including a first trench oxide having a portion disposed below a center portion of a first gate electrode, the first trench oxide excluding a shield electrode; a second trench including a second trench oxide having a portion disposed below a second gate electrode; and an epitaxial layer disposed on the substrate and having a portion extending from the first trench oxide to the second trench oxide, the portion of the first trench oxide having a thickness greater than a width of the portion of the epitaxial layer extending from the first trench oxide to the second trench oxide, the epitaxial layer having a portion disposed between a portion of a bottom surface of the first trench and the substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. An apparatus, comprising:
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a substrate; an epitaxial layer disposed on the substrate; a first trench disposed in the epitaxial layer and including a trench bottom oxide having a portion disposed below a center portion of a gate electrode disposed within the first trench, the trench bottom oxide excluding a shield electrode; and a second trench lined with a trench oxide, the epitaxial layer defining a mesa disposed between the first trench and the second trench, the trench bottom oxide included in the first trench having a thickness greater than a width of the mesa extending between the first trench to the second trench, the epitaxial layer having a portion disposed between a bottom surface of the first trench and the substrate. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification