Range sensor and range image sensor

• US 8,599,364 B2
• Filed: 05/01/2009
• Issued: 12/03/2013
• Est. Priority Date: 05/15/2008
• Status: Active Grant

• Current Assignee: Hamamatsu Photonics KK
• Original Assignee: Hamamatsu Photonics KK
• Inventors: Mase, Mitsuhito, Suzuki, Takashi
• Primary Examiner(s): Alsomiri, Isam
• Assistant Examiner(s): Woldemaryam, Assres H
• Application Number:
  US12/992,422
• Publication Number:
  US 20110141452A1
• Time in Patent Office: 1,677 Days
• Field of Search: 356/3.13, 356/4.01, 356/5.01, 356/3.14, 356/3.15, 356/28, 356/28.5, 356/213, 356/222, 357/213, 357/222
• US Class Current: 356/4.01
• CPC Class Codes: G01C 3/08 Use of electric radiation detectors
• CPC Class Codes: G01S 17/894 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• CPC Class Codes: G01S 17/931 of land vehicles
• CPC Class Codes: G01S 7/481 Constructional features, e.g. arrangements of optical elements
• CPC Class Codes: G01S 7/4863 Detector arrays, e.g. charge-transfer gates
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 31/02024 Position sensitive and lateral effect photodetectors; Quadrant photodiodes

Abstract

The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities Q_L, Q_R output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.

Claims

1. A range sensor comprising:

a charge generating region at which charges are generated in response to incident light;

first and second charge collecting regions arranged spatially apart from each other to collect the charges from the charge generating region; and

first and second transfer electrodes installed at the respective peripheries of the first and second charge collecting regions, wherein the first and second transfer electrodes receive charge transfer signals different in phase, and the first and second transfer electrodes completely surrounding the first and second charge collecting regions respectively.

2. A range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units, thereby obtaining a range image on the basis of charge quantities output from the units, wherein

one of the units is the range sensor according to claim 1.

3. The range image sensor according to claim 2,

wherein the range sensor further comprising:

a third charge collecting region arranged spatially apart from the first and charge collecting regions to collect the charges from the charge generating region, and

a third transfer electrode installed at the periphery of the third charge collecting region, and

wherein the first and third charge collecting regions surrounded by the respective first and third transfer electrodes to which a charge transfer signal of the same phase is imparted are electrically connected.

4. The range image sensor according to claim 2 which is further provided with potential adjusting means installed at the charge generating region to make steep a potential gradient from the charge generating region to each of the first and second charge collecting regions.

5. The range image sensor according to claim 4, wherein the potential adjusting means is of a conductive type different from the charge collecting region and composed of a semiconductor region higher in impurity concentration than peripheries.

6. The range image sensor according to claim 4, wherein the potential adjusting means is an electrode to which a predetermined potential is imparted.

7. The range image sensor according to claim 2, wherein each of the first and second transfer electrodes is formed in an annular shape.

8. The range image sensor according to claim 2, wherein each of the first and second transfer electrodes is formed in an annular shape having a gap.