Semiconductor memory device and driving method thereof
First Claim
1. A semiconductor memory device comprising:
- one or more bit lines;
one or more write word lines;
one or more read word lines;
one or more memory cells; and
a first inverter,wherein each of the memory cells comprises a write transistor, a read transistor, and a second inverter,wherein a maximum resistance of the write transistor is 1×
1018Ω
or more,wherein one of a source and a drain of the write transistor is connected to one of the bit lines,wherein one of a source and a drain of the read transistor is connected to another of the bit lines,wherein the other of the source and the drain of the write transistor is connected to an input of the second inverter,wherein the other of the source and the drain of the read transistor is connected to an output of the second inverter,wherein a gate of the write transistor is connected to the write word line,wherein a gate of the read transistor is connected to the read word line,wherein the one of the bit lines is configured to connected to an input of the first inverter, andwherein an output of the first inverter is connected to the another of the bit lines.
1 Assignment
0 Petitions
Accused Products
Abstract
In a memory cell, a transistor with extremely high off-resistance is used as a write transistor; a drain and a source of the write transistor are connected to a write bit line and an input of an inverter, respectively; and a drain and a source of a read transistor are connected to a read bit line and an output of the inverter, respectively. Capacitors may be intentionally disposed to the source of the write transistor. Alternatively, parasitic capacitance may be used. Since the data retention is performed using charge stored on these capacitors, a potential difference between power sources for the inverter can be 0. This eliminates leakage current between the positive and negative electrodes of the inverter, thereby reducing power consumption.
110 Citations
20 Claims
-
1. A semiconductor memory device comprising:
-
one or more bit lines; one or more write word lines; one or more read word lines; one or more memory cells; and a first inverter, wherein each of the memory cells comprises a write transistor, a read transistor, and a second inverter, wherein a maximum resistance of the write transistor is 1×
1018Ω
or more,wherein one of a source and a drain of the write transistor is connected to one of the bit lines, wherein one of a source and a drain of the read transistor is connected to another of the bit lines, wherein the other of the source and the drain of the write transistor is connected to an input of the second inverter, wherein the other of the source and the drain of the read transistor is connected to an output of the second inverter, wherein a gate of the write transistor is connected to the write word line, wherein a gate of the read transistor is connected to the read word line, wherein the one of the bit lines is configured to connected to an input of the first inverter, and wherein an output of the first inverter is connected to the another of the bit lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A semiconductor memory device comprising:
-
a first bit line and a second bit line; a write word line; a read word line; a memory cell; and a first inverter, wherein the memory cell comprises a write transistor, a read transistor, and a second inverter, wherein a maximum resistance of the write transistor is 1×
1018Ω
or more,wherein one of a source and a drain of the write transistor is connected to the first bit line, wherein one of a source and a drain of the read transistor is connected to the second bit line, wherein the other of the source and the drain of the write transistor is connected to an input of the second inverter, wherein the other of the source and the drain of the read transistor is connected to an output of the second inverter, wherein a gate of the write transistor is connected to the write word line, wherein a gate of the read transistor is connected to the read word line, wherein the second bit line is configured to connected to an input of the first inverter, and wherein an output of the first inverter is configured to connected to the first bit line. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification