Display device, semiconductor device, and driving method thereof
First Claim
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1. A semiconductor device comprising:
- a first transistor;
a second transistor; and
a third transistor,wherein one of a source and a drain of the first transistor is electrically connected to a first line, and the other of the source and the drain of the first transistor is electrically connected to a second line,wherein one of a source and a drain of the second transistor is electrically connected to the second line, the other of the source and the drain of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first line,wherein one of a source and a drain of the third transistor is electrically connected to a third line, the other of the source and the drain of the third transistor is electrically connected to the gate of the first transistor, and a gate of the third transistor is electrically connected to the third line,wherein each channel region of the second transistor and the third transistor includes an oxide semiconductor, andwherein a ratio of a channel width to a channel length of the second transistor is 0.1 times or more and less than 1 time a ratio of a channel width to a channel length of the third transistor.
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Abstract
An object is to provide a semiconductor device with improved operation. The semiconductor device includes a first transistor, and a second transistor electrically connected to a gate of the first transistor. A first terminal of the first transistor is electrically connected to a first line. A second terminal of the first transistor is electrically connected to a second line. The gate of the first transistor is electrically connected to a first terminal or a second terminal of the second transistor.
143 Citations
18 Claims
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1. A semiconductor device comprising:
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a first transistor; a second transistor; and a third transistor, wherein one of a source and a drain of the first transistor is electrically connected to a first line, and the other of the source and the drain of the first transistor is electrically connected to a second line, wherein one of a source and a drain of the second transistor is electrically connected to the second line, the other of the source and the drain of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first line, wherein one of a source and a drain of the third transistor is electrically connected to a third line, the other of the source and the drain of the third transistor is electrically connected to the gate of the first transistor, and a gate of the third transistor is electrically connected to the third line, wherein each channel region of the second transistor and the third transistor includes an oxide semiconductor, and wherein a ratio of a channel width to a channel length of the second transistor is 0.1 times or more and less than 1 time a ratio of a channel width to a channel length of the third transistor. - View Dependent Claims (2, 3, 4)
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5. A driving method of a semiconductor device comprising a first transistor, a second transistor, and a third transistor,
wherein one of a source and a drain of the first transistor is electrically connected to a first line, and the other of the source and the drain of the first transistor is electrically connected to a second line, wherein one of a source and a drain of the second transistor is electrically connected to the second line, the other of the source and the drain of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first line, wherein one of a source and a drain of the third transistor is electrically connected to a third line, the other of the source and the drain of the third transistor is electrically connected to the gate of the first transistor, and a gate of the third transistor is electrically connected to the third line, wherein each channel region of the second transistor and the third transistor comprises an oxide semiconductor, and wherein a ratio of a channel width to a channel length of the second transistor is 0.1 times or more and less than 1 time a ratio of a channel width to a channel length of the third transistor, the driving method comprising the steps of: -
turning on the first transistor, thereby establishing electrical continuity between the first line and the second line in a first period; turning on the third transistor, thereby establishing electrical continuity between the third line and a gate of the first transistor in the first period; turning on the first transistor, thereby establishing electrical continuity between the first line and the second line in a second period; turning on the first transistor, thereby establishing electrical continuity between the first line and the second line in a third period; turning on the second transistor, thereby establishing electrical continuity between the second line and the gate of the first transistor in the third period; and turning on the first transistor, thereby establishing electrical continuity between the first line and the second line in a fourth period. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a first transistor; a second transistor; and a third transistor, wherein one of a source and a drain of the first transistor is electrically connected to a first line, and the other of the source and the drain of the first transistor is electrically connected to a second line, wherein one of a source and a drain of the second transistor is electrically connected to the second line, the other of the source and the drain of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first line, wherein one of a source and a drain of the third transistor is electrically connected to a third line, the other of the source and the drain of the third transistor is electrically connected to the gate of the first transistor, and a gate of the third transistor is electrically connected to the third line, wherein each channel region of the second transistor and the third transistor includes an oxide semiconductor, and wherein a ratio of a channel width to a channel length of the first transistor is twice or more and less than 20 times a ratio of a channel width to a channel length of the third transistor. - View Dependent Claims (12, 13, 14)
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15. A semiconductor device comprising:
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a first transistor; a second transistor; a third transistor; a fourth transistor; and a fifth transistor, wherein one of a source and a drain of the first transistor is electrically connected to a first line, and the other of the source and the drain of the first transistor is electrically connected to a second line, wherein one of a source and a drain of the second transistor is electrically connected to the second line, the other of the source and the drain of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first line, wherein one of a source and a drain of the third transistor is electrically connected to a third line, the other of the source and the drain of the third transistor is electrically connected to the gate of the first transistor, and a gate of the third transistor is electrically connected to the third line, wherein one of a source and a drain of the fourth transistor is electrically connected to a fourth line, the other of the source and the drain of the fourth transistor is electrically connected to the second line, wherein one of a source and a drain of the fifth transistor is electrically connected to the fourth line, the other of the source and the drain of the fifth transistor is electrically connected to the gate of the first transistor, and a gate of the fifth transistor is electrically connected to a fifth line, and wherein each channel region of the second transistor and the third transistor includes an oxide semiconductor, a sixth transistor, and a capacitor, wherein one of a source and a drain of the sixth transistor is electrically connected to the fourth line, the other of the source and the drain of the sixth transistor is electrically connected to a gate of the fourth transistor, and a gate of the sixth transistor is electrically connected to the gate of the first transistor, and wherein a first electrode of the capacitor is electrically connected to the first line, and a second electrode of the capacitor is electrically connected to the gate of the fourth transistor. - View Dependent Claims (16, 17, 18)
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Specification