Room temperature bonding using sputtering

• US 8,602,289 B2
• Filed: 09/06/2007
• Issued: 12/10/2013
• Est. Priority Date: 09/06/2006
• Status: Active Grant

• Current Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan), Mitsubishi Heavy Industries Machine Tool Co., Ltd. (Nidec Corporation)
• Original Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan), Mitsubishi Heavy Industries, Ltd.
• Inventors: Goto, Takayuki, Utsumi, Jun, Ide, Kensuke, Takagi, Hideki, Funayama, Masahiro
• Primary Examiner(s): Stoner, Kiley
• Assistant Examiner(s): GAMINO, CARLOS J
• Application Number:
  US12/438,346
• Publication Number:
  US 20100000663A1
• Time in Patent Office: 2,287 Days
• Field of Search: 204/192.11, 204/298.13
• US Class Current: 228/115
• CPC Class Codes: B23K 20/02 by means of a press ; Diffusion bonding B23K20/001, B23K20/04 take precedence
• CPC Class Codes: B23K 20/16 with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
• CPC Class Codes: B23K 20/24 Preliminary treatment
• CPC Class Codes: B23K 2101/36 Electric or electronic devices
• CPC Class Codes: C23C 14/16 on metallic substrates or on substrates of boron or silicon
• CPC Class Codes: C23C 14/3464 using more than one target C23C14/56 takes precedence
• CPC Class Codes: C23C 14/46 by ion beam produced by an external ion source
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187

Abstract

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Claims

1. A method for room-temperature bonding a plurality of substrates via intermediate members, comprising:

providing said plurality of substrates, only a single physical sputtering source, and a plurality of targets such that said plurality of substrates is arranged at a position away from an axis line of said only a single physical sputtering source and at least one of said plurality of targets is arranged at a position away from said axis line, said axis line starting at a center of said only a single physical sputtering source and being parallel to a direction in which said only a single physical sputtering source faces, said axis line extending beyond said only a single physical sputtering source past said plurality of substrates and at least one of said plurality of targets;

forming said intermediate members on surfaces to be bonded of said plurality of substrates by physically sputtering said plurality of targets including the at least one said target arranged at a position away from said axis line using said only a single physical sputtering source;

activating said surfaces to be bonded of said plurality of substrates by physical sputtering using said only a single physical sputtering source; and

bonding said plurality of substrates.

3. The method for room-temperature bonding according to claim 1 or 2, wherein said step of forming said intermediate members on said surfaces to be bonded of said substrate and said step of activating said surfaces to be bonded of said substrate are simultaneously performed.

8. The method for room-temperature bonding according to claim 1, wherein each of said plurality of targets includes a plurality of types of metals.

9. The method for room-temperature bonding according to claim 8, wherein a composition ratio of said intermediate members is controlled by setting a component ratio of said plurality of metals.

10. The method for room-temperature bonding according to claim 1, wherein each of said plurality of targets is configured with a plurality of types of materials arranged to be independent of one another, and

wherein said plurality of types of materials is simultaneously sputtered.

11. The method of room-temperature bonding according to claim 10, wherein when said plurality of types of materials is arranged on a target substrate, by setting an arrangement area ratio of said plurality of types of materials, a composition ratio of said intermediate members is controlled.

2. A method for room-temperature bonding a plurality of substrates via intermediate members, comprising:

providing said plurality of substrates, only a single physical sputtering source, and a target composed of a plurality of types of materials such that said plurality of substrates is arranged at a position away from an axis line of said only a single physical sputtering source and said target is arranged at a position away from said axis line, said axis line starting at a center of said only a single physical sputtering source and being parallel to a direction in which said only a single physical sputtering source faces, said axis line extending beyond said only a single physical sputtering source past said plurality of substrates and said target;

forming said intermediate member on surfaces to be bonded of said plurality of substrates by physically sputtering said target using said only a single physical sputtering source;

activating said surfaces to be bonded of said plurality of substrates by physical sputtering using said only a single physical sputtering source; and

bonding said plurality of substrates.

4. The method for room-temperature bonding according to claim 2, wherein said target includes a plurality of types of metals.

5. The method for room-temperature bonding according to claim 4, wherein a composition ratio of said intermediate members is controlled by setting a component ratio of said plurality of types of metals.

6. The method for room-temperature bonding according to claim 2, wherein said target is configured with a plurality of types of materials arranged to be independent of one another, and

wherein said plurality of types of materials is simultaneously sputtered.

7. The method for room-temperature bonding according to claim 6, wherein when said plurality of types of materials is arranged on a target substrate, by setting an arrangement area ratio of said plurality of types of materials, a composition ratio of said intermediate members is controlled.