Cleaning of semiconductor processing systems

• US 8,603,252 B2
• Filed: 04/26/2007
• Issued: 12/10/2013
• Est. Priority Date: 04/26/2006
• Status: Active Grant

• Current Assignee: Entegris Incorporated
• Original Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Inventors: Dimeo, Frank, Dietz, James, Olander, W. Karl, Kaim, Robert, Neuner, Jeffrey W., Arno, Jose, Sweeney, Joseph D., Eldridge, David, Yedave, Sharad, Byl, Oleg, Stauf, Gregory T., Bishop, Steven, Marganski, Paul J.
• Primary Examiner(s): BLAN, NICOLE R
• Application Number:
  US12/298,727
• Publication Number:
  US 20100154835A1
• Time in Patent Office: 2,420 Days
• Field of Search: 134/22.18, 134/22.1, 134/22.16
• US Class Current: 134/1.1
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts

Abstract

A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF₂, XeF₄, XeF₆, NF₃, IF₅, IF₇, SF₆, C₂F₆, F₂, CF₄, KrF₂, Cl₂, HCl, ClF₃, ClO₂, N₂F₄, N₂F₂, N₃F, NFH₂, NH₂F, HOBr, Br₂, C₃F₈, C₄F₈, C₅F₈, CHF₃, CH₂F₂, CH₃F, COF₂, HF, C₂HF₅, C₂H₂F₄, C₂H₃F₃, C₂H₄F₂, C₂H₅F, C₃F₆, and organochlorides such as COCl₂, CCl₄, CHCl₃, CH₂Cl₂ and CH₃Cl.

Claims

1. An ion implantation method, comprising generating a plasma in an arc chamber of an ion implantation system from a dopant source gas flowed through the arc chamber to form dopant source ions for implantation, and during at least part of the time during which the dopant source gas is flowed through the arc chamber, flowing cleaning gas through the arc chamber concurrently with the dopant source gas, to effect cleaning in the ion implantation system, wherein the cleaning gas comprises an XeF₂ plasma which produces Xe⁺ ions effective for sputter cleaning.

2. A method of cleaning one or more components of an ion implantation system for at least partial removal of an ionization-related deposit from said one or more components, said method comprising contacting said one or more components with a cleaning composition comprising a gas-phase reactive material, under conditions enabling reaction of the gas-phase reactive material with the deposits to effect said at least partial removal, wherein said gas-phase reactive material comprises XeF₂, wherein said one or more components is an ion source, and wherein contacting comprises cleaning said ion source between successive ion generation processes involving different dopant source gases, in which such method comprises flowing XeF₂ through the ion source between such processes with a plasma, wherein contacting further comprises generating an XeF₂ plasma in said ion source, to produce Xe⁺ ions effective for sputter cleaning of the ion source and Xe⁺ ions effective for sputter cleaning of components downstream of the ion source.

3. The method of claim 2, wherein the ion implantation system is adapted to conduct an ion implantation process selected from the group consisting of plasma immersion and molecular ion implantation.

4. The method of claim 2, wherein said deposit includes at least one of boron, silicon, arsenic, phosphorus, germanium, tungsten, molybdenum, selenium, antimony, indium tantalum and carbon, and wherein said one or more components is contacted with the gas-phase reactive material for sufficient time to at least partially remove said deposit from one or more components.

5. The method of claim 2, wherein contacting comprises

(a) continuously flowing a gas-phase reactive material from a cleaning composition source into a vacuum chamber of the ion implantation system;

and

(b) regulating the partial pressure of the gas-phase reactive material in the vacuum chamber by use of a control valve on an output of the vacuum chamber, wherein the gas-phase reactive material reacts selectively with the deposit on the vacuum chamber or the at least one component therein.

6. The method of claim 5 wherein the continuous flow of gas-phase reactive material is flowing at a variable rate.