Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same
First Claim
1. A solar cell, comprising:
- a glass substrate;
a first CNT-based conductive layer located, directly or indirectly, on the glass substrate;
a first semiconductor layer in contact with the first CNT-based conductive layer;
at least one absorbing layer located, directly or indirectly, on the first semiconductor layer;
a second semiconductor layer located, directly or indirectly, on the at least one absorbing layer;
a second CNT-based conductive layer in contact with the second semiconductor layer; and
a back contact located, directly or indirectly, on the second CNT-based conductive layer,wherein at least one of the first and second CNT-based conductive layers is alloyed and/or otherwise metalized with;
palladium, silver, or both palladium and silver.
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Accused Products
Abstract
Certain example embodiments of this invention relate to large-area transparent conductive coatings (TCCs) including carbon nanotubes (CNTs) and nanowire composites, and methods of making the same. The σdc/σopt ratio of such thin films may be improved via stable chemical doping and/or alloying of CNT-based films. The doping and/or alloying may be implemented in a large area coating system, e.g., on glass and/or other substrates. In certain example embodiments, a CNT film may be deposited and then doped via chemical functionalization and/or alloyed with silver and/or palladium. Both p-type and n-type dopants may be used in different embodiments of this invention. In certain example embodiments, silver and/or other nanowires may be provided, e.g., to further decrease sheet resistance. Certain example embodiments may provide coatings that approach, meet, or exceed 90% visible transmission and 90 ohms/square target metrics.
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Citations
19 Claims
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1. A solar cell, comprising:
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a glass substrate; a first CNT-based conductive layer located, directly or indirectly, on the glass substrate; a first semiconductor layer in contact with the first CNT-based conductive layer; at least one absorbing layer located, directly or indirectly, on the first semiconductor layer; a second semiconductor layer located, directly or indirectly, on the at least one absorbing layer; a second CNT-based conductive layer in contact with the second semiconductor layer; and a back contact located, directly or indirectly, on the second CNT-based conductive layer, wherein at least one of the first and second CNT-based conductive layers is alloyed and/or otherwise metalized with;
palladium, silver, or both palladium and silver. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10, 11, 12, 13, 14)
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7. A photovoltaic device, comprising:
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a substrate; at least one photovoltaic thin-film layer; first and second electrodes; and first and second transparent, conductive CNT-based layers; wherein the first and second CNT-based layers are respectively doped with n- and p-type dopants, and wherein one or both of the first and second CNT-based layers comprise(s) a solution-deposited film including meshes of silver nanowires located substantially uniformly across a major surface of the substrate, the meshes including porous areas, at least some of the porous areas being at least partially filled with CNT bundles. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification