Semiconductor device

• US 8,604,472 B2
• Filed: 11/01/2012
• Issued: 12/10/2013
• Est. Priority Date: 11/09/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sasagawa, Shinya, Fujiki, Hiroshi
• Primary Examiner(s): MENZ, DOUGLAS M
• Application Number:
  US13/666,147
• Publication Number:
  US 20130112968A1
• Time in Patent Office: 404 Days
• Field of Search: 257/43, 257/59
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device which achieves miniaturization with favorable characteristics maintained is provided. In addition, a miniaturized semiconductor device is provided with high yield. In a semiconductor device including an oxide semiconductor, the contact resistance between the oxide semiconductor and the source electrode or the drain electrode is reduced with miniaturization advanced. Specifically, an oxide semiconductor film is processed to be an island-shaped oxide semiconductor film whose side surface has a tapered shape. Further, the side surface has a taper angle greater than or equal to 1° and less than 10°, and at least part of the source electrode and the drain electrode is in contact with the side surfaces of the oxide semiconductor film. With such a structure, the contact region of the oxide semiconductor film and the source electrode or the drain electrode is increased, whereby the contact resistance is reduced.

Claims

1. A semiconductor device comprising:

an oxide semiconductor film having island-shaped;

a gate insulating film over the oxide semiconductor film;

a gate electrode being in contact with the gate insulating film and provided at a position overlapping with the oxide semiconductor film;

an interlayer insulating film over the gate insulating film and the gate electrode;

an opening formed in the gate insulating film and the interlayer insulating film and reaching the oxide semiconductor film; and

a source electrode or a drain electrode formed to fill the opening and being in contact with the oxide semiconductor film,

wherein a side surface of the oxide semiconductor film has a taper angle greater than or equal to 1° and

less than 10°

, and

wherein at least part of the source electrode or the drain electrode is in contact with the side surface.

2. The semiconductor device according to claim 1,

wherein the side surface of the oxide semiconductor film has a plurality of taper angles, and

wherein at least one of the plurality of taper angles is greater than or equal to 1°

and less than 10°

.

3. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a channel formation region and a pair of low resistance regions with the channel formation region provided therebetween.

4. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes at least one of oxides of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.

5. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a crystal portion, and

wherein the c-axis are aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed in the crystal portion.

6. A semiconductor device comprising:

an oxide semiconductor film having island-shaped;

a gate insulating film over the oxide semiconductor film;

a gate electrode being in contact with the gate insulating film and provided at a position overlapping with the oxide semiconductor film;

an interlayer insulating film over the gate insulating film and the gate electrode;

an opening formed in the gate insulating film and the interlayer insulating film and reaching the oxide semiconductor film; and

a source electrode or a drain electrode formed to fill the opening and being in contact with the oxide semiconductor film,

wherein the oxide semiconductor film has a side surface with continuous curvature having a taper angle greater than or equal to 1° and

less than 10°

, and

wherein at least part of the source electrode or the drain electrode is in contact with the side surface.

7. The semiconductor device according to claim 6,

wherein the taper angle is a tilt angle formed by a bottom surface of the oxide semiconductor film and a given point of the side surface.

8. The semiconductor device according to claim 6,

wherein the oxide semiconductor film includes a channel formation region and a pair of low resistance regions with the channel formation region provided therebetween.

9. The semiconductor device according to claim 6,

wherein the oxide semiconductor film includes at least one of oxides of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.

10. The semiconductor device according to claim 6,

wherein the oxide semiconductor film includes a crystal portion, and

wherein the c-axis are aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed in the crystal portion.