Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a transistor comprising an oxide semiconductor layer, a gate and a gate insulating film between the oxide semiconductor layer and the gate, the oxide semiconductor layer including channel formation region;
an operational amplifier comprising a first input terminal, a second input terminal and an output terminal, wherein the first input terminal is electrically connected to one of a source and a drain of the transistor at a first node; and
a resistive element electrically connected between the first node and a second node.
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Abstract
An object is to provide a UV sensor with high accuracy, which can be manufactured at low cost and formed over a flexible substrate. A semiconductor device includes a transistor having an oxide semiconductor film, and a voltage source electrically connected to a gate of the transistor, in which a threshold voltage of the transistor is changed by irradiating the oxide semiconductor film with UV rays; a change in the threshold voltage of the transistor is dependent on a wavelength of the UV rays with which the oxide semiconductor film is irradiated, and the voltage source adjusts a voltage output to the gate of the transistor.
110 Citations
20 Claims
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1. A semiconductor device comprising:
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a transistor comprising an oxide semiconductor layer, a gate and a gate insulating film between the oxide semiconductor layer and the gate, the oxide semiconductor layer including channel formation region; an operational amplifier comprising a first input terminal, a second input terminal and an output terminal, wherein the first input terminal is electrically connected to one of a source and a drain of the transistor at a first node; and a resistive element electrically connected between the first node and a second node. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a transistor comprising an oxide semiconductor layer, a gate and a gate insulating film between the oxide semiconductor layer and the gate, the oxide semiconductor layer including channel formation region; a variable voltage source electrically connected to the gate of the transistor; an operational amplifier comprising a first input terminal, a second input terminal and an output terminal, wherein the first input terminal is electrically connected to one of a source and a drain of the transistor at a first node; and a resistive element electrically connected between the first node and a second node. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a transistor comprising an oxide semiconductor layer, a gate and a gate insulating film between the oxide semiconductor layer and the gate, the oxide semiconductor layer including channel formation region; an operational amplifier comprising a first input terminal, a second input terminal and an output terminal, wherein the first input terminal is electrically connected to one of a source and a drain of the transistor at a first node; a resistive element electrically connected between the first node and a second node; a first voltage source electrically connected to the other of the source and the drain of the transistor; and a second voltage source electrically connected to the second input terminal, wherein the semiconductor device is configured to detect an off-current upon irradiation of a UV ray on the oxide semiconductor layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsSaito, Toshihiko, Uemura, Yuta
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Primary Examiner(s)Thai, Luan C
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Application NumberUS13/865,335Publication NumberTime in Patent Office236 DaysField of Search257/43, 257/E29.296, 257/E21.411US Class Current257/43CPC Class CodesG02F 1/13312 Circuits comprising photode...H01L 27/1214 comprising a plurality of T...H01L 27/1218 with a particular compositi...H01L 27/1225 with semiconductor material...H01L 27/1266 the substrate on which the ...H01L 29/7869 having a semiconductor body...H01L 31/032 including, apart from dopin...H01L 31/1136 the device being a metal-in...
