×

Semiconductor device including memory cell

  • US 8,604,476 B2
  • Filed: 10/11/2011
  • Issued: 12/10/2013
  • Est. Priority Date: 11/05/2010
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising a memory circuit, the memory circuit comprising:

  • a first transistor;

    a second transistor;

    a first layer serving as a channel formation layer of the second transistor;

    a second layer formed using the same material and at the same time as the first layer, wherein the second layer is apart from the first layer and serves as a first gate of the first transistor;

    a first insulating layer over the first layer and the second layer;

    a first conductive layer overlapping with the first layer with the first insulating layer provided therebetween;

    a semiconductor layer overlapping with the second layer with the first insulating layer provided therebetween;

    a second conductive layer electrically connected to the semiconductor layer;

    a third conductive layer electrically connected to the first conductive layer and the semiconductor layer;

    a second insulating layer over the semiconductor layer, the second conductive layer, and the third conductive layer; and

    a fourth conductive layer overlapping with the semiconductor layer with the second insulating layer provided therebetween, the fourth conductive layer serving as a second gate of the first transistor,wherein the first conductive layer is provided between the first insulating layer and the third conductive layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×