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Wafer level photonic device die structure and method of making the same

  • US 8,604,491 B2
  • Filed: 07/21/2011
  • Issued: 12/10/2013
  • Est. Priority Date: 07/21/2011
  • Status: Active Grant
First Claim
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1. A vertical Light Emitting diode (LED) device comprising:

  • a plurality of epi structures each including a first-type-doped portion, a second-type-doped portion, a quantum well structure between the first-type-doped and second-type doped portions, and an ohmic-reflector that is in electrical with the first-type-doped portion or the second-type-doped portion;

    a semi-insulated carrier structure with a plurality of conductive contact pads in electrical contact with the epi structures and a plurality of bonding pads on a side of the carrier structure distal the epi structures, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL), wherein each epi structure is disposed over a different one of the conductive contact pads;

    a first insulating film on a side of the carrier structure proximal the epi structures; and

    a second insulating film on a side of the carrier structure distal the epi structures.

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