Wafer level photonic device die structure and method of making the same
First Claim
1. A vertical Light Emitting diode (LED) device comprising:
- a plurality of epi structures each including a first-type-doped portion, a second-type-doped portion, a quantum well structure between the first-type-doped and second-type doped portions, and an ohmic-reflector that is in electrical with the first-type-doped portion or the second-type-doped portion;
a semi-insulated carrier structure with a plurality of conductive contact pads in electrical contact with the epi structures and a plurality of bonding pads on a side of the carrier structure distal the epi structures, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL), wherein each epi structure is disposed over a different one of the conductive contact pads;
a first insulating film on a side of the carrier structure proximal the epi structures; and
a second insulating film on a side of the carrier structure distal the epi structures.
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Accused Products
Abstract
A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure.
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Citations
20 Claims
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1. A vertical Light Emitting diode (LED) device comprising:
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a plurality of epi structures each including a first-type-doped portion, a second-type-doped portion, a quantum well structure between the first-type-doped and second-type doped portions, and an ohmic-reflector that is in electrical with the first-type-doped portion or the second-type-doped portion; a semi-insulated carrier structure with a plurality of conductive contact pads in electrical contact with the epi structures and a plurality of bonding pads on a side of the carrier structure distal the epi structures, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL), wherein each epi structure is disposed over a different one of the conductive contact pads; a first insulating film on a side of the carrier structure proximal the epi structures; and a second insulating film on a side of the carrier structure distal the epi structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor structure comprising:
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an epi wafer; and a carrier wafer with a plurality of conductive contact pads in electrical communication with the epi wafer, in which the epi wafer includes a first-type-doped portion and a second-type-doped portion and an ohmic reflector coupled to the second-type-doped portion, further in which the first-type-doped portion is distal the carrier wafer and in which the second-type-doped portion is proximal the carrier wafer. - View Dependent Claims (10, 11, 12)
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13. A wafer-level process for manufacturing a semiconductor structure that has an epi wafer coupled to a carrier wafer, the semiconductor structure having a plurality of Light Emitting diode (LED) dies, the process comprising for each of the dies:
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forming a first contact pad on a second-type-doped portion of the epi wafer, the epi wafer also having a first-type-doped portion; bonding the carrier wafer and the epi wafer so that the first contact pad electrically contacts a second contact pad on a side of the carrier wafer distal the epi wafer, the first contact pad electrically contacting the second contract pad by a first via through the carrier wafer; and forming an interconnect through the epi wafer, the interconnect electrically coupling the first-type-doped portion to a third contact pad on the side of the carrier wafer distal the epi wafer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification