Radiation-emitting thin-film semiconductor chip
First Claim
1. A radiation-emitting thin-film semiconductor chip comprising an epitaxial multilayer structure, a carrier substrate and a reflective layer or interface, the epitaxial multilayer structure comprising:
- an active, radiation-generating layer,a first main face, anda second main face remote from the first main face for coupling out the radiation generated in the active, radiation-generating layer,wherein the first main face of the multilayer structure is coupled to the reflective layer or interface, andwherein a patterned region of the multilayer structure that adjoins the second main face of the multilayer structure is patterned by either one- or two-dimensional depressions forming convex elevations, each said convex elevation having an upper surface that is not contiguous with an upper surface of an adjacent elevation,wherein the epitaxial multilayer structure is based on one of an arsenide compound semiconductor material and GaN,wherein the depressions of the patterned region are formed in said epitaxially grown semiconductor material of the multilayer structure,wherein the reflective layer is located between the carrier substrate and the epitaxial multilayer structure, andwherein the reflective layer is formed as a metallic contact layer.
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Abstract
A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second main face (18)—remote from the first main face—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main face (18) of the multilayer structure is patterned one- or two-dimensionally with convex elevations (26).
32 Citations
24 Claims
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1. A radiation-emitting thin-film semiconductor chip comprising an epitaxial multilayer structure, a carrier substrate and a reflective layer or interface, the epitaxial multilayer structure comprising:
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an active, radiation-generating layer, a first main face, and a second main face remote from the first main face for coupling out the radiation generated in the active, radiation-generating layer, wherein the first main face of the multilayer structure is coupled to the reflective layer or interface, and wherein a patterned region of the multilayer structure that adjoins the second main face of the multilayer structure is patterned by either one- or two-dimensional depressions forming convex elevations, each said convex elevation having an upper surface that is not contiguous with an upper surface of an adjacent elevation, wherein the epitaxial multilayer structure is based on one of an arsenide compound semiconductor material and GaN, wherein the depressions of the patterned region are formed in said epitaxially grown semiconductor material of the multilayer structure, wherein the reflective layer is located between the carrier substrate and the epitaxial multilayer structure, and wherein the reflective layer is formed as a metallic contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A radiation-emitting thin-film semiconductor chip comprising an epitaxial multilayer structure, a carrier substrate and a reflective layer or interface, the epitaxial multilayer structure comprising:
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an active, radiation-generating layer, a first main face, and a second main face remote from the first main face for coupling out the radiation generated in the active, radiation-generating layer, wherein the first main face of the multilayer structure is coupled to the reflective layer or interface, wherein a patterned region of the multilayer structure that adjoins the second main face of the multilayer structure is patterned by either one- or two-dimensional depressions forming convex elevations, each said convex elevation having an upper surface that is not contiguous with an upper surface of an adjacent elevation, wherein the epitaxial multilayer structure is based on one of an arsenide compound semiconductor material and GaN, wherein the depressions of the patterned region are formed in said epitaxially grown semiconductor material of the multilayer structure, wherein the reflective layer is located between the carrier substrate and the epitaxial multilayer structure, wherein the reflective layer is formed as a metallic contact layer, and wherein the carrier substrate comprises sapphire or silicon.
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Specification