×

Light emitting diodes including barrier sublayers

  • US 8,604,502 B2
  • Filed: 08/15/2012
  • Issued: 12/10/2013
  • Est. Priority Date: 07/23/2001
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor light emitting device comprising:

  • a semiconductor region that comprises a light-emitting region;

    a reflector layer on the semiconductor region; and

    a conductive barrier layer on the reflector layer, the conductive barrier layer comprising a plurality of first spaced-apart sublayers.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×