Light emitting diodes including barrier sublayers
First Claim
1. A semiconductor light emitting device comprising:
- a semiconductor region that comprises a light-emitting region;
a reflector layer on the semiconductor region; and
a conductive barrier layer on the reflector layer, the conductive barrier layer comprising a plurality of first spaced-apart sublayers.
3 Assignments
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Accused Products
Abstract
Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
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Citations
27 Claims
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1. A semiconductor light emitting device comprising:
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a semiconductor region that comprises a light-emitting region; a reflector layer on the semiconductor region; and a conductive barrier layer on the reflector layer, the conductive barrier layer comprising a plurality of first spaced-apart sublayers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification