X-Y address type solid state image pickup device and method of producing the same
First Claim
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1. A solid state image pickup device comprising:
- a device layer between a wiring layer and a light-shielding film, electrodes and wirings being within said wiring layer;
a photo-diode configured to convert incident light into an electrical signal, said photo-diode being within said device layer,wherein said incident light is transmissible through an opening portion, said opening portion being a hole through said light-shielding film,wherein said wiring layer is between a substrate support member and said device layer.
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Abstract
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
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Citations
19 Claims
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1. A solid state image pickup device comprising:
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a device layer between a wiring layer and a light-shielding film, electrodes and wirings being within said wiring layer; a photo-diode configured to convert incident light into an electrical signal, said photo-diode being within said device layer, wherein said incident light is transmissible through an opening portion, said opening portion being a hole through said light-shielding film, wherein said wiring layer is between a substrate support member and said device layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 19)
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11. A solid state image pickup device comprising:
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a device layer between a wiring layer and a light-shielding film, electrodes and wirings being within said wiring layer; a photo-diode configured to convert incident light into an electrical signal, said photo-diode being within said device layer, wherein said incident light is transmissible through an opening portion, said opening portion being a hole through said light-shielding film, wherein said photo-diode includes a first conductivity region, said first conductivity region being within said device layer, wherein a wiring layer side of the first conductivity region is closer to said wiring layer than to said light-shielding film, a light-receiving surface side of the first conductivity region being closer to said light-shielding film than to said wiring layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A solid state image pickup device comprising:
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a device layer between a wiring layer and a light-shielding film, electrodes and wirings being within said wiring layer; a photo-diode configured to convert incident light into an electrical signal, said photo-diode being within said device layer, wherein said incident light is transmissible through an opening portion, said opening portion being a hole through said light-shielding film, wherein said photo-diode includes a first conductivity region, said first conductivity region being within said device layer, wherein said first conductivity region is between second conductivity regions, said second conductivity regions having a conductivity type opposite to said first conductivity region, wherein one of the second conductivity regions is between said wiring layer and said first conductivity region, another of the second conductivity regions being between said first conductivity region and said light-shielding film.
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Specification