Semiconductor laser device and manufacturing method thereof

• US 8,605,769 B2
• Filed: 12/06/2005
• Issued: 12/10/2013
• Est. Priority Date: 12/08/2004
• Status: Expired due to Fees

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Yoshimoto, Susumu, Matsubara, Hideki, Saitou, Hirohisa, Misaki, Takashi, Nakanishi, Fumitake, Mori, Hiroki
• Primary Examiner(s): VAN ROY, TOD THOMAS
• Application Number:
  US11/665,286
• Publication Number:
  US 20070280318A1
• Time in Patent Office: 2,926 Days
• Field of Search: 372/43.01, 372/44.01, 372/99
• US Class Current: 372/99
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01S 2301/14 Semiconductor lasers with special structural design for lasing in a specific polarisation mode
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/185 having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] comprising a photonic bandgap structure H01S5/11
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.

Claims

1. A semiconductor laser device, comprising:

a substrate having a principal plane;

a two-dimensional diffraction grating that is formed on said substrate in a direction in which said principal plane extends and has an epitaxial layer of gallium nitride and a low refractive index material having a refractive index lower than that of said epitaxial layer, wherein said low refractive index material is made of at least one material selected from the group consisting of MgF2, CaF2, BaF2 and LiF, and wherein the diffraction grating has diffraction grating points comprised of a pattern of columns of the low refractive index material or the gallium nitride epitaxial layer, wherein each column includes substantially vertical sidewalls such that a distance between opposite sidewalls of the column is substantially constant along the height of the column;

a first conductive-type clad layer formed on said substrate;

a second conductive-type clad layer formed on said substrate;

an active layer that is interposed between said first conductive-type clad layer and said second conductive-type clad layer and emits light when a carrier is injected thereinto; and

a layer containing gallium nitride that covers a region directly on said two-dimensional diffraction grating, wherein said layer containing gallium nitride is grown in a horizontal direction along the principal plane of the substrate directly on the low refractive index material,

wherein the epitaxial layer of gallium nitride in the two-dimensional diffraction grating and the layer containing gallium nitride that covers a region directly on the two-dimensional grating form one continuous epitaxial gallium nitride layer.

2. The semiconductor laser device according to claim 1, wherein said epitaxial layer has a plurality of holes, and said plurality of holes are filled with said low refractive index material to form diffraction grating points.

3. The semiconductor laser device according to claim 1, wherein said low refractive index material has a plurality of holes, and said plurality of holes are filled with gallium nitride, which forms said epitaxial layer, to form diffraction grating points.

4. The semiconductor laser device according to claim 1, wherein said substrate is made of conductive gallium nitride or conductive silicon carbide.