Micromechanical sensor

• US 8,607,632 B2
• Filed: 08/03/2009
• Issued: 12/17/2013
• Est. Priority Date: 09/25/2008
• Status: Expired due to Fees

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Meisel, Daniel Christoph, Hauer, Joerg
• Primary Examiner(s): KWOK, HELEN C
• Application Number:
  US13/057,045
• Publication Number:
  US 20110219877A1
• Time in Patent Office: 1,597 Days
• Field of Search: 735/143.2, 735/143.6, 735/143.8, 734/93, 735/041.2, 735/041.4, 735/041.6
• US Class Current: 73/514.32
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 3/0086 Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
• CPC Class Codes: G01P 15/125 by capacitive pick-up

Abstract

A micromechanical sensor having at least one movably mounted measuring element which is opposite at least one stationary electrode, the electrode being situated in a first plane, and being contacted by at least one printed conductor track which is situated in a second plane. A third plane is located between the first plane and the second plane, the third plane including an electrically conductive material.

Claims

1. A micromechanical sensor comprising:

At least one stationary electrode situated in a first plane;

At least one movably mounted measuring element situated opposite the stationary electrode;

At least one printed conductor track situated in a second plane and contacting the stationary electrode;

At least one printed conductor track situated in the second plane and crossing the stationary electrode situated in the first plane; and

An electrically conductive material situated in a third plane, the third plane being situated between the first plane and the second plane, the electrically conductive material forming a Faraday cage between the stationary electrode and the printed conductor track crossing the stationary electrode.

2. The micromechanical sensor according to claim 1, wherein the first, the second, and the third planes are separated from one another by insulating layers.

3. The micromechanical sensor according to claim 1, wherein at least one of the first plane, the second plane, and the third plane contains a polycrystalline silicon.

4. The micromechanical sensor according to claim 1, wherein a material of the third plane is not attacked in a gas-phase etching process.

5. The micromechanical sensor according to claim 1, further comprising a finger electrode situated in the first plane.

6. The micromechanical sensor according to claim 1, wherein the micromechanical sensor is an acceleration sensor.

7. The micromechanical sensor according to claim 1, wherein the micromechanical sensor is a yaw rate sensor.