Method of fabricating semiconductor substrate and method of fabricating light emitting device

• US 8,609,449 B2
• Filed: 10/25/2012
• Issued: 12/17/2013
• Est. Priority Date: 08/26/2009
• Status: Expired due to Fees

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Chang Youn, Sakai, Shiro, Kim, Hwa Mok, Lee, Joon Hee, Moon, Soo Young, Kim, Kyoung Wan
• Primary Examiner(s): Le, Thao P.
• Application Number:
  US13/694,058
• Publication Number:
  US 20130109121A1
• Time in Patent Office: 418 Days
• Field of Search: 438/46, 438/47
• US Class Current: 438/47
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

Claims

1. A method of fabricating a light emitting device, the method comprising:

preparing a plurality of growth chambers;

preparing a substrate to grow a nitride semiconductor layer;

growing a first nitride semiconductor layer on the substrate in a first growth chamber;

growing a second nitride semiconductor layer

on the first nitride semiconductor layer; and

growing compound semiconductor layers on the second nitride semiconductor layer in a second growth chamber connected to the first substrate chamber via a communication path.

2. The method of claim 1, wherein a shutter is disposed between the communication path and the first growth chamber or the second growth chamber.

3. The method of claim 2, wherein the substrate is transferred from the first growth chamber to the second growth chamber while remaining under vacuum.

4. The method of claim 3, wherein the growth of the compound semiconductor layers further comprises growing an active layer.

5. The method of claim 4, wherein the compound semiconductor layers comprise a different material than the first nitride semiconductor layer.

6. The method of claim 5, wherein the growth of the second nitride semiconductor layer produces reaction by-products.

7. The method of claim 6, wherein the first nitride semiconductor layer comprises a GaN layer having a thickness of about 2 μ

m.

8. The method of claim 7, wherein reaction by-products produced by the growth of the second nitride semiconductor layer contaminates the first growth chamber.

9. The method of claim 6, wherein the second growth chamber is for a metal organic chemical vapor deposition chamber.

10. The method of claim 6, further comprising forming a patterned layer between the first nitride semiconductor layer and the second nitride semiconductor layer.

11. The method of claim 10, wherein the patterned layer comprises a plurality of voids.

12. The method of claim 11, further comprising infiltrating a chemical etchant into the voids.

13. The method of claim 12, further comprising separating the substrate from one of the nitride semiconductor layers.

14. A method of fabricating a light emitting device, the method comprising:

preparing a plurality of growth chambers;

preparing a first substrate to grow a nitride semiconductor layer;

growing a first nitride semiconductor layer on the first substrate in a first growth chamber;

growing a second nitride semiconductor layer on the first nitride semiconductor layer;

growing compound semiconductor layers on the second nitride semiconductor layer in a second growth chamber, the second growth chamber being connected to the first growth chamber via a communication path;

attaching a second substrate on the compound semiconductor layers; and

separating the first substrate from one of the first and second nitride semiconductor layers.

15. The method of claim 14, further comprising forming a patterned layer between the first nitride semiconductor layer and the second nitride semiconductor layer.

16. The method of claim 15, wherein the patterned layer comprises a plurality of voids.

17. The method of claim 16, wherein the separation of the first substrate comprises infiltrating a chemical etchant into the voids.

18. The method of claim 14, wherein a shutter is disposed between the first growth chamber and the second growth chamber.

19. The method of claim 18, wherein the substrate is transferred from the first chamber to the second chamber while remaining under vacuum.