Method of fabricating semiconductor substrate and method of fabricating light emitting device
First Claim
1. A method of fabricating a light emitting device, the method comprising:
- preparing a plurality of growth chambers;
preparing a substrate to grow a nitride semiconductor layer;
growing a first nitride semiconductor layer on the substrate in a first growth chamber;
growing a second nitride semiconductor layeron the first nitride semiconductor layer; and
growing compound semiconductor layers on the second nitride semiconductor layer in a second growth chamber connected to the first substrate chamber via a communication path.
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Abstract
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
41 Citations
19 Claims
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1. A method of fabricating a light emitting device, the method comprising:
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preparing a plurality of growth chambers; preparing a substrate to grow a nitride semiconductor layer; growing a first nitride semiconductor layer on the substrate in a first growth chamber; growing a second nitride semiconductor layer on the first nitride semiconductor layer; and growing compound semiconductor layers on the second nitride semiconductor layer in a second growth chamber connected to the first substrate chamber via a communication path. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of fabricating a light emitting device, the method comprising:
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preparing a plurality of growth chambers; preparing a first substrate to grow a nitride semiconductor layer; growing a first nitride semiconductor layer on the first substrate in a first growth chamber; growing a second nitride semiconductor layer on the first nitride semiconductor layer; growing compound semiconductor layers on the second nitride semiconductor layer in a second growth chamber, the second growth chamber being connected to the first growth chamber via a communication path; attaching a second substrate on the compound semiconductor layers; and separating the first substrate from one of the first and second nitride semiconductor layers. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification