Semiconductor structure and fabricating method thereof

• US 8,609,460 B2
• Filed: 04/18/2011
• Issued: 12/17/2013
• Est. Priority Date: 09/13/2010
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Liu, Po-Tsun, Teng, Li-Feng, Shieh, Han-Ping D., Lin, Wei-Ting, Hung, Ming-Chin, Hsiao, Chun-Ching, Chang, Jiun-Jye, Chen, Po-Lun, Chou, Yi-Teh, Li, Fu-Hai
• Primary Examiner(s): Cao, Phat X
• Assistant Examiner(s): Vieira, Diana C
• Application Number:
  US13/089,282
• Publication Number:
  US 20120061661A1
• Time in Patent Office: 974 Days
• Field of Search: 257/E29.296, 257/43, 257/E21.411, 438/104
• US Class Current: 438/104
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.

Claims

1. A fabricating method of a semiconductor structure, comprising:

forming a gate, a source, and a drain on a substrate; and

performing a single deposition process to form an oxide semiconductor material and an oxide semiconductor nitride between the gate and the source and drain,

wherein nitrogen gas is introduced before the single deposition process is completely performed, so as to form the oxide semiconductor nitride on the oxide semiconductor material.

2. The fabricating method as claimed in claim 1, wherein the nitride gas introduced in the single deposition process has a flow rate of about 2 sccm, a thickness of the oxide semiconductor nitride is about 50 nm, and a thickness of the oxide semiconductor material is about 50 nm.

3. The fabricating method as claimed in claim 1, wherein the oxide semiconductor material comprises indium-gallium-zinc oxide, zinc oxide, tin oxide, indium-zinc oxide, gallium-zinc oxide, zinc-tin oxide, or indium-tin oxide, and the oxide semiconductor nitride comprises indium-gallium-zinc oxide nitride, zinc oxide nitride, tin oxide nitride, indium-zinc oxide nitride, gallium-zinc oxide nitride, zinc-tin oxide nitride, or indium-tin oxide nitride.

4. The fabricating method as claimed in claim 1, further comprising forming a pixel electrode, the pixel electrode being electrically connected to the drain.

5. A fabricating method of a semiconductor structure, comprising:

forming a gate, a source, and a drain on a substrate;

forming an oxide semiconductor material and an oxide semiconductor nitride between the gate and the source and drain;

wherein nitrogen gas is introduced before the step of forming the oxide semiconductor material is completely performed, so as to form the oxide semiconductor nitride on the oxide semiconductor material.

6. The fabricating method as claimed in claim 5, wherein the introduced nitride gas has a flow rate of about 2 seem, a thickness of the oxide semiconductor nitride is about 50 nm, and a thickness of the oxide semiconductor material is about 50 nm.

7. The fabricating method as claimed in claim 5, wherein the oxide semiconductor material comprises indium-gallium-zinc oxide, zinc oxide, tin oxide, indium-zinc oxide, gallium-zinc oxide, zinc-tin oxide, or indium-tin oxide, and the oxide semiconductor nitride comprises indium-gallium-zinc oxide nitride, zinc oxide nitride, tin oxide nitride, indium-zinc oxide nitride, gallium-zinc oxide nitride, zinc-tin oxide nitride, or indium-tin oxide nitride.

8. The fabricating method as claimed in claim 5, further comprising forming a pixel electrode, the pixel electrode being electrically connected to the drain.