Method for fabricating semiconductor device with buried bit lines
First Claim
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1. A method for fabricating a semiconductor device, comprising:
- etching a substrate to form trenches that separate active regions;
forming an insulation layer having an opening to open a portion of a sidewall of each active region;
forming a silicon layer pattern to gap-fill a portion of each trench and cover the opening in the insulation layer;
wherein the forming of the silicon layer pattern comprises;
forming a silicon layer having a seam within the silicon layer,wherein the silicon layer gap-fills the trenches; and
etching the silicon layer to etch an upper portion of the seam, wherein the etched silicon layer covers the opening;
forming a metal layer over the silicon layer pattern; and
forming a metal silicide layer as buried bit lines, wherein the metal silicide layer is formed when the metal layer reacts with the silicon layer pattern.
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Abstract
A method for fabricating a semiconductor device includes etching a substrate to form trenches that separate active regions, forming an insulation layer having an opening to open a portion of a sidewall of each active region, forming a silicon layer pattern to gap-fill a portion of each trench and cover the opening in the insulation layer, forming a metal layer over the silicon layer pattern, and forming a metal silicide layer as buried bit lines, where the metal silicide layer is formed when the metal layer reacts with the silicon layer pattern.
15 Citations
24 Claims
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1. A method for fabricating a semiconductor device, comprising:
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etching a substrate to form trenches that separate active regions; forming an insulation layer having an opening to open a portion of a sidewall of each active region; forming a silicon layer pattern to gap-fill a portion of each trench and cover the opening in the insulation layer; wherein the forming of the silicon layer pattern comprises; forming a silicon layer having a seam within the silicon layer, wherein the silicon layer gap-fills the trenches; and etching the silicon layer to etch an upper portion of the seam, wherein the etched silicon layer covers the opening; forming a metal layer over the silicon layer pattern; and forming a metal silicide layer as buried bit lines, wherein the metal silicide layer is formed when the metal layer reacts with the silicon layer pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fabricating a semiconductor device, comprising:
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etching a substrate to form trenches that separate active regions; forming an insulation layer having an opening to open a portion of a sidewall of each active region; forming a silicon layer pattern to gap-fill a portion of each trench and cover the opening in the insulation layer; wherein the forming of the silicon layer pattern comprises; forming a silicon layer over the insulation layer to gap-fill the trenches; performing a primary etch process on the silicon layer; forming spacers on sidewalls of the insulation layer after the primary etch process; and performing a secondary etch process on the silicon layer by using the spacers as an etch barrier; forming a metal layer over the silicon layer pattern; and forming a metal silicide layer as buried bit lines, wherein the metal silicide layer is formed when the metal layer reacts with the silicon layer pattern. - View Dependent Claims (9)
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10. A method for fabricating a semiconductor device, comprising:
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etching a substrate to form trenches that separate active regions; forming an insulation layer having an opening to open a portion of a sidewall of each active region; forming a silicon layer over the insulation layer to gap-fill a portion of each trench and cover the opening in the insulation layer; forming spacers on portions of sidewalls of the insulation layer; etching the silicon layer by using the spacers as an etch barrier; forming a metal layer over the etched silicon layer; and forming a metal silicide layer as buried bit lines, wherein the metal silicide layer is formed when the metal layer reacts with the silicon layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification