On-chip heat spreader
First Claim
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1. A method of forming a semiconductor die, the method comprising:
- forming at least one active device in a semiconductor substrate;
forming an inter-metal dielectric (IMD) layer on a first surface of the semiconductor substrate;
forming a metal interconnect structure in the IMD layer;
forming an insulating layer over the IMD layer;
forming a first dielectric layer over the insulating layer;
forming a first bonding pad in the first dielectric layer, the first bonding pad being electrically coupled to the at least one active device through the metal interconnect structure; and
forming a first heat spreader on the insulating layer, the first heat spreader being insulated from the first bonding pad and comprising a structure extending from a center region of the first surface to an outer edge of the first surface, wherein the first heat spreader has a bottom surface coplanar with a bottom surface of the first bonding pad.
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Abstract
A three dimensional (3D) stacked chip structure with chips having on-chip heat spreader and method of forming are described. A 3D stacked chip structure comprises a first die having a first substrate with a dielectric layer formed on a front surface. One or more bonding pads and a heat spreader may be simultaneously formed in the dielectric layer. The first die is bonded with corresponding bond pads on a surface of a second die to form a stacked chip structure. Heat generated in the stacked chip structure may be diffused to the edges of the stacked chip structure through the heat spreader.
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Citations
20 Claims
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1. A method of forming a semiconductor die, the method comprising:
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forming at least one active device in a semiconductor substrate; forming an inter-metal dielectric (IMD) layer on a first surface of the semiconductor substrate; forming a metal interconnect structure in the IMD layer; forming an insulating layer over the IMD layer; forming a first dielectric layer over the insulating layer; forming a first bonding pad in the first dielectric layer, the first bonding pad being electrically coupled to the at least one active device through the metal interconnect structure; and forming a first heat spreader on the insulating layer, the first heat spreader being insulated from the first bonding pad and comprising a structure extending from a center region of the first surface to an outer edge of the first surface, wherein the first heat spreader has a bottom surface coplanar with a bottom surface of the first bonding pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a semiconductor device, the method comprising:
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forming a first semiconductor die comprising; forming a first TSV through the first semiconductor die; forming a first bonding pad on a front-side surface of the first semiconductor die, the first bonding pad being electrically coupled to the first TSV; forming a first heat spreader on the front-side surface, the first heat spreader being insulated from the first TSV and the first bonding pad, and the first heat spreader having at least one major axis extending along the front-side surface of the first semiconductor die; and forming a second semiconductor die comprising; forming a second bonding pad on a front-side surface of the second semiconductor die; and forming a second heat spreader on the front-side surface of the second semiconductor die, the second heat spreader insulated from the second bonding pad; and attaching the first semiconductor die to the second semiconductor die, wherein the first and second bonding pads are electrically coupled, and wherein the first and second heat spreaders are physically coupled. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of forming an electronic package, the method comprising:
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forming a first semiconductor die comprising; forming a first TSV through the first semiconductor die; forming a first bonding pad on a front-side surface of the first semiconductor die; forming a second bonding pad on a back-side surface of the first semiconductor die, wherein the first TSV is coupled to one of the first and second bonding pads; and forming a first heat spreader on the front-side surface, the first heat spreader being insulated from the first TSV and the first bonding pad; forming a second semiconductor die comprising; forming a third bonding pad on a front-side surface of the second semiconductor die; attaching the first semiconductor die to a packaging substrate; attaching the second semiconductor die to the first semiconductor die, wherein the first and third bonding pads are electrically coupled; attaching a package housing to the packaging substrate, wherein the housing encapsulates the first and second semiconductor dies; and filling the package housing with a thermal conducting medium. - View Dependent Claims (17, 18, 19, 20)
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Specification