Process for the transfer of a thin film comprising an inclusion creation step
First Claim
1. A process for forming a thin film from a substrate comprising the steps of:
- (a) forming a first film on a surface of the substrate by epitaxial deposition, the first film doped by boron to form a layer of inclusions extending parallel to the surface of the substrate, wherein the layer of inclusions forms a gaseous compound trap zone and, subsequently, forming a second film doped by boron on the first film by epitaxial deposition, wherein the second film has a boron concentration that is less than the first film;
(b) after step (a), implanting a dose of gaseous compounds into the gaseous compound trap zone, wherein the dose of gaseous compounds is sufficient to cause formation of micro-cavities in a fracture plane including the gaseous compound trap zone and along which the thin film can be separated from the remainder of the substrate, the gaseous compound trap zone substantially confining the gaseous compounds therein;
(c) separating the thin film from the substrate along the fracture plane and thereafter recovering the thin film.
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Abstract
A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
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Citations
14 Claims
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1. A process for forming a thin film from a substrate comprising the steps of:
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(a) forming a first film on a surface of the substrate by epitaxial deposition, the first film doped by boron to form a layer of inclusions extending parallel to the surface of the substrate, wherein the layer of inclusions forms a gaseous compound trap zone and, subsequently, forming a second film doped by boron on the first film by epitaxial deposition, wherein the second film has a boron concentration that is less than the first film; (b) after step (a), implanting a dose of gaseous compounds into the gaseous compound trap zone, wherein the dose of gaseous compounds is sufficient to cause formation of micro-cavities in a fracture plane including the gaseous compound trap zone and along which the thin film can be separated from the remainder of the substrate, the gaseous compound trap zone substantially confining the gaseous compounds therein; (c) separating the thin film from the substrate along the fracture plane and thereafter recovering the thin film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification
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- Resources
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Current AssigneeCommissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
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Original AssigneeCommissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
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InventorsMoriceau, Hubert, Bruel, Michel, Aspar, Bernard, Maleville, Christophe
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Primary Examiner(s)Ahmed, Shamim
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Application NumberUS13/901,882Publication NumberTime in Patent Office207 DaysField of Search438/464, 438/458, 438/480, 438/481US Class Current438/464CPC Class CodesH01L 21/26506 in group IV semiconductorsH01L 21/76254 with separation/delaminatio...Y10S 438/977 Thinning or removal of subs...
