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Stair step formation using at least two masks

  • US 8,609,536 B1
  • Filed: 07/06/2012
  • Issued: 12/17/2013
  • Est. Priority Date: 07/06/2012
  • Status: Active Grant
First Claim
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1. A method for forming a memory structure, comprising:

  • forming a first mask over a conductive material to define a first exposed area; and

    forming a second mask over a portion of the first exposed area to define a second exposed area, the second exposed area is less than the first exposed area; and

    removing conductive material from the second exposed area,wherein an initial first dimension of the second mask is less than a first dimension of the first exposed area and an initial second dimension of the second mask is at least a second dimension of the first exposed area plus a distance equal to a difference between the initial first dimension of the second mask and a final first dimension of the second mask after a stair step structure is formed.

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