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Stability enhancements in metal oxide semiconductor thin film transistors

  • US 8,610,119 B2
  • Filed: 12/04/2009
  • Issued: 12/17/2013
  • Est. Priority Date: 12/24/2008
  • Status: Active Grant
First Claim
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1. A method of fabricating a multilayer semiconductor structure, comprising:

  • forming an electrode layer;

    forming a dielectric layer proximate to the electrode layer;

    after forming the dielectric layer, exposing the dielectric layer to a hydrogen-containing plasma; and

    after exposing the dielectric layer to the hydrogen-containing plasma, forming a metal oxide semiconductor layer proximate to the dielectric layerwherein a hydrogenated region is formed at a semiconductor-dielectric interface of the dielectric layer, the hydrogenated region incorporating hydrogen that decreases in concentration from the semiconductor-dielectric interface into one or both of the dielectric layer and the semiconductor layer.

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