Liquid crystal display device and manufacturing method thereof
First Claim
Patent Images
1. A display device comprising:
- a transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer;
a first wiring electrically connected to the gate electrode;
a second wiring electrically connected to one of the source electrode and the drain electrode;
a pixel electrode electrically connected to the other of the source electrode and the drain electrode;
a capacitor wiring;
a first groove portion in the semiconductor layer; and
a second groove portion in the semiconductor layer,wherein the semiconductor layer overlaps with the first wiring, the second wiring, the pixel electrode, and the capacitor wiring,wherein the first groove portion is formed over the first wiring to cross the first wiring in a line width direction of the first wiring,wherein the second groove portion is formed over the capacitor wiring to cross the capacitor wiring in a line width direction of the capacitor wiring, andwherein the second groove portion extends beyond edges of the pixel electrode in a direction parallel to a direction in which the second wiring extends.
1 Assignment
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Accused Products
Abstract
A photolithography step and an etching step for forming an island-shaped semiconductor layer is omitted, and a liquid crystal display device is manufactured through the following four photolithography steps: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for forming a source electrode and a drain electrode (including a wiring or the like formed from the same layer), a step for forming a contact hole (including removal of an insulating layer or the like in a region other than the contact hole), and a step for forming a pixel electrode (including a wiring or the like formed from the same layer). In the step of forming the contact hole, a groove portion in which the semiconductor layer is removed is formed, so that formation of parasitic channels is prevented.
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Citations
28 Claims
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1. A display device comprising:
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a transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer; a first wiring electrically connected to the gate electrode; a second wiring electrically connected to one of the source electrode and the drain electrode; a pixel electrode electrically connected to the other of the source electrode and the drain electrode; a capacitor wiring; a first groove portion in the semiconductor layer; and a second groove portion in the semiconductor layer, wherein the semiconductor layer overlaps with the first wiring, the second wiring, the pixel electrode, and the capacitor wiring, wherein the first groove portion is formed over the first wiring to cross the first wiring in a line width direction of the first wiring, wherein the second groove portion is formed over the capacitor wiring to cross the capacitor wiring in a line width direction of the capacitor wiring, and wherein the second groove portion extends beyond edges of the pixel electrode in a direction parallel to a direction in which the second wiring extends. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer; a first wiring electrically connected to the gate electrode; a second wiring electrically connected to one of the source electrode and the drain electrode; a pixel electrode electrically connected to the other of the source electrode and the drain electrode; a capacitor wiring; and a groove portion in the semiconductor layer, wherein the semiconductor layer overlaps with the first wiring, the second wiring, the pixel electrode, and the capacitor wiring, wherein the groove portion is formed over the first wiring to cross the first wiring in a line width direction of the first wiring, wherein the groove portion is formed over the capacitor wiring to cross the capacitor wiring in a line width direction of the capacitor wiring, and wherein the groove portion extends beyond edges of the pixel electrode in a direction parallel to a direction in which the second wiring extends. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A display device comprising:
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a transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer; a first wiring electrically connected to the gate electrode; a second wiring electrically connected to one of the source electrode and the drain electrode; a pixel electrode electrically connected to the other of the source electrode and the drain electrode; a capacitor wiring; a first groove portion in the semiconductor layer; a second groove portion in the semiconductor layer; and a third groove portion in the semiconductor layer, wherein the semiconductor layer overlaps with the first wiring, the second wiring, the pixel electrode, and the capacitor wiring, wherein the first groove portion is formed over the first wiring to cross the first wiring in a line width direction of the first wiring, wherein the second groove portion is formed over the capacitor wiring to cross the capacitor wiring in a line width direction of the capacitor wiring, and wherein the third groove portion extends beyond edges of the pixel electrode in a direction parallel to a direction in which the second wiring extends. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A manufacturing method of a display device, comprising the steps of:
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forming a gate electrode over a substrate by a first photolithography step; forming a gate insulating layer over the gate electrode; forming a semiconductor layer over the gate insulating layer; forming a source electrode and a drain electrode over the semiconductor layer by a second photolithography step; forming an insulating layer over the source electrode and the drain electrode; removing a part of the insulating layer overlapping with the drain electrode to form a contact hole by a third photolithography step, removing another part of the insulating layer, a part of the semiconductor layer, and a part of the gate insulating layer to form a groove portion by the third photolithography step, and forming a pixel electrode over the insulating layer by a fourth photolithography step. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsMiyake, Hiroyuki, Arasawa, Ryo, Kusunoki, Koji
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Primary Examiner(s)Such, Matthew W
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Assistant Examiner(s)Harrison, Monica D
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Application NumberUS13/227,116Publication NumberTime in Patent Office832 DaysField of Search438/104, 257/43, 257/E29.296, 257/E21.461US Class Current257/43CPC Class CodesG02F 1/13439 characterised by their elec...G02F 1/13458 Terminal padsG02F 1/13606 having means for reducing p...G02F 1/136213 Storage capacitors associat...G02F 1/136227 Through-hole connection of ...G02F 1/136286 Wiring, e.g. gate line, dra...H01L 27/1225 with semiconductor material...H01L 27/124 with a particular compositi...H01L 29/41733 for thin film transistors w...
