Light emitting device

• US 8,610,145 B2
• Filed: 09/29/2004
• Issued: 12/17/2013
• Est. Priority Date: 09/30/2003
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation), Toshiba Materials Company Limited (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation), Toshiba Materials Company Limited (Toshiba Corporation)
• Inventors: Yano, Keiichi
• Primary Examiner(s): Li, Meiya
• Application Number:
  US10/572,595
• Publication Number:
  US 20070200128A1
• Time in Patent Office: 3,366 Days
• Field of Search: 257/13, 257/79, 257/84, 257/98, 257/99, 257/E25.019, 257/E25.032, 257E33056-E33062, 257/778, 257/774, 257/701, 257/702, 438/FOR.157, 438/FOR.287, 438/FOR.453, 438/106, 438/108, 313/501, 313/512
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/641 characterized by the materials
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A light emitting apparatus 10 includes an aluminum nitride co-fired substrate 11 and a light emitting device 12 arranged on a front surface of the co-fired substrate, in which the front surface of the aluminum nitride substrate 11 bearing the light emitting device 12 is mirror-polished so as to have a surface roughness of 0.3 μm Ra or less, and the light emitting apparatus 10 further includes a vapor-deposited metal film 14 and via holes 15. The vapor-deposited metal film 14 is arranged on the front surface of the aluminum nitride substrate 11 around the light emitting device 12 and has a reflectivity of 90% or more with respect to light emitted from the light emitting device 12. The via holes 15 penetrates the aluminum nitride substrate 11 from the front surface bearing the light emitting device 12 to the rear surface to thereby allow conduction to the light emitting device 12 from the rear surface. This configuration can reduce light emitting apparatuses in size and can provide light emitting apparatuses that are excellent in heat radiation performance, allow a larger current to pass therethrough, and can have a significantly increased luminance with a high luminous efficiency.

Claims

1. A white-light emitting apparatus comprising:

a co-fired aluminum nitride substrate; and

a light emitting device arranged on a front surface of the co-fired aluminum nitride substrate,

wherein the front surface of the co-fired aluminum nitride substrate, on which the light emitting device is arranged, is mirror-polished so as to have a surface roughness of 0.3 μ

m Ra or less,

wherein the light emitting apparatus comprises a vapor-deposited metal film and via holes, the vapor-deposited metal film being arranged directly on the front surface of the co-fired aluminum nitride substrate around the light emitting device and having a reflectivity of 90% or more with respect to light emitted from the light emitting device, and the via holes penetrating the co-fired aluminum nitride substrate from the front surface, on which the light emitting device is arranged, to the rear surface of the co-fired aluminum nitride substrate to thereby allow an electrical conduction to the light emitting device from the rear surface to the front surface without using a wire-bonding,

wherein the vapor-deposited metal film comprises aluminum or silver and has a thickness of 1 to 5 μ

m, and

wherein the co-fired aluminum nitride substrate has a thickness of 0.3 to 0.6 mm.

2. The light emitting apparatus according to claim 1, comprising a LED chip as the light emitting device and further comprising at least one peripheral component arranged on the co-fired aluminum nitride substrate, wherein the at least one peripheral component is selected from the group consisting of a thermistor, a resistor, and a diode for inhibiting reverse current.

3. The light emitting apparatus according to claim 1, wherein the co-fired aluminum nitride substrate carrying the light emitting device has a surface roughness of 0.1 μ

m Ra or less.

4. The light emitting apparatus according to claim 1, wherein the light emitting device is mounted on the co-fired aluminum nitride substrate through a metal bump.

5. The light emitting apparatus according to claim 1, wherein a white resist film is arranged on an exposed front surface of the co-fired aluminum nitride substrate other than a region where the vapor-deposited metal film is arranged.

6. The light emitting apparatus according to claim 5, wherein the white resist film comprises a solder resist ink and is formed by screen printing method.

7. The light emitting apparatus according to claim 1, wherein the vapor-deposited metal film is deposited via a chemical vapor deposition method or a sputtering method.

8. The light emitting apparatus according to claim 1, wherein a maximum current quantity applicable to said apparatus is 1100 to 2000 mA.

9. The light emitting apparatus according to claim 1, comprising a blue LED chip as the light emitting device and a yellow phosphor, wherein said blue LED chip is mounted on the co-fired aluminum nitride substrate and said yellow phosphor is mounted so as to cover the mounted blue LED chip.